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China MOCVD Manufacturer, Supplier, Factory

Dependable high-quality and fantastic credit standing are our principles, which will help us at a top-ranking position. Adhering to your tenet of "quality very first, client supreme" for MOCVD, Semiconductor Quartz Screen, Thin Film Growth, Quartz Parts, Chemical Vapor Deposition, We welcome new and previous consumers from all walks of lifestyle to speak to us for upcoming business enterprise associations and mutual results!
MOCVD, Now, with the development of internet, and the trend of internationalization, we've got decided to extend business to overseas market. With the propose of bringing more profits to oversea customers by providing directly abroad. So we have changed our mind, from home to abroad, hope to give our customers more profit, and looking forward to more chance to make business.

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  • TaC Coating Spare Part

    TaC Coating Spare Part

    TaC Coating is currently mainly used in processes such as silicon carbide single crystal growth (PVT method), epitaxial disk (including silicon carbide epitaxy, LED epitaxy), etc. Combined with the good long-term stability of TaC Coating Plate, Veteksemicon's TaC Coating Plate has become the benchmark for TaC Coating spare parts. We look forward to you becoming our long-term partner.
  • High purity quartz boat

    High purity quartz boat

    Our High purity quartz boat is made of fused quartz (SiO₂ content ≥ 99.99%). With its excellent resistance to extreme environments, low thermal expansion coefficient, and long life cycle, it has become an irreplaceable key consumable in the semiconductor and new energy industries.
  • CVD SiC Coating Protector

    CVD SiC Coating Protector

    Vetek Semiconductor's CVD SiC Coating Protector used is LPE SiC epitaxy, The term "LPE" usually refers to Low Pressure Epitaxy (LPE) in Low Pressure Chemical Vapor Deposition (LPCVD). In semiconductor manufacturing, LPE is an important process technology for growing single crystal thin films, often used to grow silicon epitaxial layers or other semiconductor epitaxial layers.Pls no hesitate to contact us for more questions.
  • Graphite Heating Unit

    Graphite Heating Unit

    VeTek Semiconductor Graphite Heating Unit is a high-performance industrial heating solution made of high-purity graphite material, which can provide precise and efficient heating effect. Graphite Heating Unit is widely used in semiconductor, electronics, ceramics and other fields. Welcome your further inquiry.
  • SiC Ceramics Membrane

    SiC Ceramics Membrane

    Veteksemicon SiC ceramics membranes are a type of inorganic membrane and belong to solid membrane materials in membrane separation technology. SiC membranes are fired at a temperature above 2000℃. The surface of the particles is smooth and round. There are no closed pores or channels in the support layer and each layer. They are usually composed of three layers with different pore sizes.
  • SiC Ceramic vacuum chuck for wafer

    SiC Ceramic vacuum chuck for wafer

    Veteksemicon SiC Ceramic Vacuum Chuck for Wafer is engineered to deliver exceptional precision and reliability in semiconductor wafer processing. Manufactured from high-purity silicon carbide, it ensures excellent thermal conductivity, chemical resistance, and superior mechanical strength, making it ideal for demanding applications such as etching, deposition, and lithography. Its ultra-flat surface guarantees stable wafer support, minimizing defects and improving process yield. this vacuum chuck is the trusted choice for high-performance wafer handling.

  • How much do you know about sapphire?

    This article describes that LED substrate is the largest application of sapphire, as well as the main methods of preparing sapphire crystals: growing sapphire crystals by the Czochralski method, growing sapphire crystals by the Kyropoulos method, growing sapphire crystals by the guided mold method, and growing sapphire crystals by the heat exchange method.

  • What are the differences between Isotropic Graphite and Siliconized Graphite?

    Graphite materials have a wide range of application scenarios. Among them, Isotropic Graphite and Siliconized Graphite are the two main different types of graphite materials, and their characteristics, application scenarios and advantages are significantly different. This blog will conduct a comparative analysis from three aspects: structural characteristics, application scenarios and product advantages.

  • Why does 3C-SiC stand out among many SiC polymorphs? - VeTek Semiconductor

    Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

  • What is CMP Polishing Slurry Preparation Process

    In semiconductor manufacturing, Chemical Mechanical Planarization (CMP) plays a vital role. The CMP process combines chemical and mechanical actions to smooth the surface of silicon wafers, providing a uniform foundation for subsequent steps such as thin-film deposition and etching. CMP polishing slurry, as the core component of this process, significantly impacts polishing efficiency, surface quality, and the final performance of the product

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

  • Why does SiC coated Graphite Susceptor fail? - VeTek Semiconductor

    During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

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