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Epi wafer holder
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Epi wafer holder

VeTek Semiconductor is a professional Epi Wafer Holder manufacturer and factory in China. Epi Wafer Holder is a wafer holder for the epitaxy process in semiconductor processing. It is a key tool to stabilize the wafer and ensure uniform growth of the epitaxial layer. It is widely used in epitaxy equipment such as MOCVD and LPCVD. It is an irreplaceable device in the epitaxy process. Welcome your further consultation.

VeTek Semiconductor supports customized product services, so Epi Wafer Holder can provide you with customized product services based on the size of the wafer (100mm, 150mm, 200mm, 300mm, etc.). We sincerely hope to be your long-term partner in China.


The Function and Working Principle of Epi Wafer Holders


In the realm of semiconductor manufacturing, the epitaxy process is crucial for fabricating high - performance semiconductor devices. At the heart of this process is the Epi Wafer Holder, which plays a central role in ensuring the quality and efficiency of epitaxial growth.


The Epi Wafer Holder is primarily designed to securely hold the wafer during the epitaxy process. Its key task is to maintain the wafer in a precisely controlled temperature and gas - flow environment. This meticulous control allows the epitaxial material to be evenly deposited on the wafer surface, a critical step in creating uniform and high - quality semiconductor layers.


Under the high - temperature conditions typical of the epitaxy process, the Epi Wafer Holder excels in its function. It firmly fixes the wafer within the reaction chamber while scrupulously avoiding any potential damage, such as scratches, and preventing particle contamination on the wafer surface.


Material Properties: Why Silicon Carbide (SiC) Shines


Epi Wafer Holders are often crafted from silicon carbide (SiC), a material that offers a unique combination of beneficial properties. SiC has a low thermal expansion coefficient of approximately 4.0 x 10⁻⁶ /°C. This characteristic is pivotal in maintaining the dimensional stability of the holder at elevated temperatures. By minimizing thermal expansion, it effectively prevents stress on the wafer that could otherwise result from temperature - related size changes.


Additionally, SiC boasts excellent high - temperature stability. It can seamlessly withstand the high temperatures ranging from 1,200°C to 1,600°C required in the epitaxy process. Coupled with its exceptional corrosion resistance and admirable thermal conductivity (usually between 120 - 160 W/mK), SiC emerges as the optimal choice for epitaxial wafer holders.


Key Functions in the Epitaxial Process

The Epi Wafer Holder's importance in the epitaxial process cannot be overstated. It functions as a stable carrier under high - temperature and corrosive gas environments, ensuring that the wafer remains unaffected during epitaxial growth and fostering the uniform development of the epitaxial layer.


1.Wafer Fixation and Precise Alignment A high - precision engineered Epi Wafer Holder firmly positions the wafer at the geometric center of the reaction chamber. This placement guarantees that the wafer surface forms an ideal contact angle with the reaction gas flow. Precise alignment is not only essential for achieving uniform epitaxial layer deposition but also significantly reduces stress concentration resulting from wafer position deviation.


2.Uniform Heating and Thermal Field Control Leveraging the excellent thermal conductivity of the SiC material, the Epi Wafer Holder enables efficient heat transfer to the wafer in high - temperature epitaxial environments. Simultaneously, it exercises fine control over the temperature distribution of the heating system. This dual mechanism ensures a consistent temperature across the entire wafer surface, effectively eliminating thermal stress caused by excessive temperature gradients. As a result, the likelihood of defects like wafer warping and cracks is considerably minimized.


3.Particle Contamination Control and Material Purity The use of high - purity SiC substrates and CVD - coated graphite materials is a game - changer in particle contamination control. These materials substantially curtail the generation and diffusion of particles during the epitaxy process, providing a pristine environment for the growth of the epitaxial layer. By reducing interface defects, they enhance the quality and reliability of the epitaxial layer.


4.Corrosion Resistance During the MOCVD or LPCVD processes, the Epi Wafer Holder must endure corrosive gases such as ammonia and trimethyl gallium. The outstanding corrosion resistance of SiC materials enables the holder to have an extended service life, thereby guaranteeing the reliability of the entire production process.


Customized Services by VeTek Semiconductor

VeTek Semiconductor is committed to meeting diverse customer needs. We offer customized Epi Wafer Holder services tailored to various wafer sizes, including 100mm, 150mm, 200mm, 300mm, and beyond. Our team of experts is dedicated to delivering high - quality products that precisely match your requirements. We sincerely look forward to becoming your long - term partner in China, providing you with top - notch semiconductor solutions.




SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE:


SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE


Basic physical properties of CVD SiC coating


Basic physical properties of CVD SiC coating
Property
Typical Value
Crystal Structure
FCC β phase polycrystalline, mainly (111) oriented
Density
3.21 g/cm³
Hardness
2500 Vickers hardness(500g load)
Grain Size
2~10μm
Chemical Purity
99.99995%
Heat Capacity
640 J·kg-1·K-1
Sublimation Temperature
2700℃
Flexural Strength
415 MPa RT 4-point
Young' s Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity
300W·m-1·K-1
Thermal Expansion(CTE)
4.5×10-6K-1


VeTek Semiconductor Epi wafer holder Production shops:



VeTek Semiconductor Epi wafer holder Production shops


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