Products

Veteksemicon Solid Silicon Carbide (SiC) Focusing Ring is a critical consumable component used in advanced semiconductor epitaxy and plasma etching processes, where precise control of plasma distribution, thermal uniformity, and wafer edge effects is essential. Manufactured from high-purity solid silicon carbide, this focusing ring exhibits exceptional plasma erosion resistance, high-temperature stability, and chemical inertness, enabling reliable performance under aggressive process conditions. We look forward to your inquiry.

Silicon carbide crystal growth is a core process in the manufacturing of high-performance semiconductor devices. The stability, precision, and compatibility of crystal growth equipment directly determine the quality and yield of silicon carbide ingots. Based on the characteristics of Physical Vapor Transport (PVT) technology, Veteksemi has developed a resistance heating furnace for silicon carbide crystal growth, enabling stable growth of 6-inch, 8-inch, and 12-inch silicon carbide crystals with full compatibility with conductive, semi-insulating, and N-type material systems. Through precise control of temperature, pressure, and power, it effectively reduces crystal defects such as EPD (Etch Pit Density) and BPD (Basal Plane Dislocation), while featuring low energy consumption and a compact design to meet the high standards of industrial large-scale production.

The SiC seed bonding technology is one of the key processes that affect crystal growth.VETEK has developed a specialized vacuum hot-press furnace for seed bonding based on the characteristics of this process. The furnace can effectively reduce various defects generated during the seed bonding process, thereby improving the yield and the final quality of the crystal ingot.

Veteksemicon SiC Coated Epitaxial Reactor chamber is a core component designed for demanding semiconductor epitaxial growth processes. Utilizing advanced chemical vapor deposition (CVD), this product forms a dense, high-purity SiC coating on a high-strength graphite substrate, resulting in superior high-temperature stability and corrosion resistance. It effectively resists the corrosive effects of reactant gases in high-temperature process environments, significantly suppresses particulate contamination, ensures consistent epitaxial material quality and high yield, and substantially extends the maintenance cycle and lifespan of the reaction chamber. It is a key choice for improving the manufacturing efficiency and reliability of wide-bandgap semiconductors such as SiC and GaN.

The Silicon Cassette Boat from Veteksemicon is a precision-engineered wafer carrier developed specifically for high-temperature semiconductor furnace applications, including oxidation, diffusion, drive-in, and annealing. Fabricated from ultra-high-purity silicon and finished to advanced contamination-control standards, it provides a thermally stable, chemically inert platform that closely matches the properties of silicon wafers themselves. This alignment minimizes thermal stress, reduces slip and defect formation, and ensures exceptionally uniform heat distribution throughout the batch

In the core process of silicon carbide epitaxial growth, Veteksemicon understands that susceptor performance directly determines the quality and production efficiency of the epitaxial layer. Our high-purity EPI susceptors, designed specifically for the SiC field, utilize a special graphite substrate and a dense CVD SiC coating. With their superior thermal stability, excellent corrosion resistance, and extremely low particle generation rate, they ensure unparalleled thickness and doping uniformity for customers even in harsh high-temperature process environments. Choosing Veteksemicon means choosing the cornerstone of reliability and performance for your advanced semiconductor manufacturing processes.