Products

VeTek Semiconductor is a professional Porous Graphite Guide Ring manufacturer and supplier in China. we not only provide advanced and durable Porous Graphite Guide Ring, but also support customized services. Welcome to buy Porous Graphite Guide Ring from our factory.

VETEK MOCVD SiC Coated Susceptor is a precision-engineered carrier solution specifically developed for LED and compound semiconductor epitaxial growth. It demonstrates exceptional thermal uniformity and chemical inertness within complex MOCVD environments. Leveraging VETEK’s rigorous CVD deposition process, we are committed to enhancing wafer growth consistency and extending the service life of core components, providing stable and reliable performance assurance for every batch of your semiconductor production.

Vetek CVD TaC Coated Susceptor is a precision solution specifically developed for high-performance MOCVD epitaxial growth. It demonstrates excellent thermal stability and chemical inertness in extreme high-temperature environments of 1600°C. Relying on VETEK's rigorous CVD deposition process, we are committed to improving wafer growth uniformity, extending the service life of core components, and providing stable and reliable performance guarantees for your every batch of semiconductor production.

Veteksemicon Solid Silicon Carbide (SiC) Focusing Ring is a critical consumable component used in advanced semiconductor epitaxy and plasma etching processes, where precise control of plasma distribution, thermal uniformity, and wafer edge effects is essential. Manufactured from high-purity solid silicon carbide, this focusing ring exhibits exceptional plasma erosion resistance, high-temperature stability, and chemical inertness, enabling reliable performance under aggressive process conditions. We look forward to your inquiry.

Silicon carbide crystal growth is a core process in the manufacturing of high-performance semiconductor devices. The stability, precision, and compatibility of crystal growth equipment directly determine the quality and yield of silicon carbide ingots. Based on the characteristics of Physical Vapor Transport (PVT) technology, Veteksemi has developed a resistance heating furnace for silicon carbide crystal growth, enabling stable growth of 6-inch, 8-inch, and 12-inch silicon carbide crystals with full compatibility with conductive, semi-insulating, and N-type material systems. Through precise control of temperature, pressure, and power, it effectively reduces crystal defects such as EPD (Etch Pit Density) and BPD (Basal Plane Dislocation), while featuring low energy consumption and a compact design to meet the high standards of industrial large-scale production.

The SiC seed bonding technology is one of the key processes that affect crystal growth.VETEK has developed a specialized vacuum hot-press furnace for seed bonding based on the characteristics of this process. The furnace can effectively reduce various defects generated during the seed bonding process, thereby improving the yield and the final quality of the crystal ingot.