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CVD SiC Coated Graphite Susceptor for Wafer Carrier

CVD SiC Coated Graphite Susceptor for Wafer Carrier

VETEK CVD SiC Coated Graphite Susceptor for Wafer Carrier is a high-performance wafer support component designed for semiconductor epitaxy processes. The product uses high-purity graphite as the substrate and is coated with a uniform CVD silicon carbide (SiC) layer, providing excellent thermal stability, chemical resistance, and particle control. As a critical graphite susceptor component, it directly supports wafers inside the reaction chamber and helps maintain uniform temperature distribution and stable epitaxial growth conditions.
High Purity SiC Powder for SiC Crystal Growth

High Purity SiC Powder for SiC Crystal Growth

VeTek Semiconductor delivers premium-grade High Purity Silicon Carbide (SiC) Powder tailored specifically for high-yield SiC Crystal Growth (PVT process), semiconductor substrate production, and advanced functional ceramics. Processed through ultra-clean purification technology, our high purity SiC raw material provides exceptionally low trace metal levels, reproducible sublimation performance, and highly consistent batch-to-batch quality to meet rigorous semiconductor manufacturing requirements.
High Purity Quartz Wafer Boat For TEL

High Purity Quartz Wafer Boat For TEL

VETEK High Purity Quartz Wafer Boat for TEL semiconductor equipment is manufactured from semiconductor-grade quartz material and designed for wafer handling in high-temperature processes such as diffusion, oxidation, annealing, and CVD. With excellent thermal stability, chemical resistance, and low contamination characteristics, it provides reliable wafer support for semiconductor manufacturing applications.
Porous Tantalum Carbide (TaC) Coated Graphite Ring

Porous Tantalum Carbide (TaC) Coated Graphite Ring

The VETEK Porous TaC Coated Graphite Ring is a thermal field component engineered for SiC single crystal growth via the PVT (Physical Vapor Transport) process. It is produced from high-purity porous graphite and coated with tantalum carbide (TaC) using CVD technology. The design targets high-temperature stability, chemical resilience, and controlled thermal field performance. By minimizing contamination and supporting process consistency, this component contributes to reproducible SiC crystal growth outcomes.
CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

The VETEK CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier is designed for rapid thermal processing (RTP) and rapid thermal annealing (RTA) systems used in semiconductor manufacturing. Manufactured from high-purity isostatic graphite with a dense CVD SiC coating, it provides outstanding thermal stability, excellent temperature uniformity, superior chemical resistance, and ultra-low particle generation. Engineered to withstand repeated rapid heating and cooling cycles, the carrier ensures reliable wafer support and stable process performance for silicon wafer annealing and other high-temperature semiconductor applications.
CVD Tantalum Carbide(TaC) Coated Susceptor

CVD Tantalum Carbide(TaC) Coated Susceptor

The VETEK CVD TaC Coated Susceptor combines a high-purity isostatic graphite substrate with a dense CVD tantalum carbide (TaC) coating to deliver exceptional thermal stability, corrosion resistance, and low particle generation for demanding semiconductor epitaxy. Designed for SiC, GaN, and AlN epitaxial growth, it minimizes contamination, improves wafer temperature uniformity, and extends component service life in high-temperature MOCVD and CVD processes.
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