Sample Mapping

Based on the physical sample provided by the customer (even if it is a worn or fractured used part), we offer a full-spectrum service ranging from physical structure reverse engineering to material-level physicochemical characterization. Leveraging semiconductor-grade high-precision inspection equipment, we accurately quantify complex 3D geometric structures, coating/substrate interface properties, and material physical parameters, ensuring that the reverse-engineered product meets or exceeds OEM standards in physical fit, process compatibility, and service life (Form-Fit-Function Replacement).

What We Measure (Technical Deliverables):

• Dimensional & Geometric Tolerances: Utilizing high-precision Coordinate Measuring Machines (CMM) and optical 3D scanners, we perform full-size point-cloud modeling and reconstruction of complex cavity structures and mounting/locating holes, achieving micron-level accuracy.
• Surface Micro-Morphology & Flatness: Employing white-light interferometers and optical profilometers to evaluate nanometer-scale surface roughness (Ra) and large-area flatness, meeting wafer-handling and chamber-sealing requirements.
• Edge Micro-Features: High-magnification mapping of edge R-radii and chamfer micro-profiles to optimize coating climb morphology and avoid stress concentration at sharp corners that can cause high-temperature delamination.
• Graphite Substrate & Thermal Matching Analysis: Assessment of high-purity graphite substrate density, grain size, and coefficient of thermal expansion (CTE) to ensure thermal-stress matching between substrate and CVD coating.
• Coating Cross-Section & Interface Bonding Quality: Non-destructive XRF and metallographic cross-section SEM analysis to measure absolute thickness, radial uniformity of the CVD coating, and interface penetration depth.
• Phase Structure & Micro-Crystal Analysis: XRD evaluation of cubic phase (β-SiC) purity of CVD SiC; qualitative assessment of chemical stoichiometry and crystal structure characteristics of CVD TaC.

Real Case & Customer Benefits (Experience):

A 12-inch semiconductor etching component customer: OEM supply discontinued; only one worn used part was available. Through CMM reverse modeling + SEM coating cross-section analysis, we completed substitute-part development and on-tool testing within 2 months without any original drawings, achieving 100% installation fit. Ultimately, the component procurement cycle was reduced from the original 6-month import lead time to 2 months, unit procurement cost dropped by 42%, and this model has been stably supplied for more than 30 batches.

Silicon Carbide (SiC) coating on SEM coating cross-section

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