VeTek Semiconductor's unique carbide coatings provide superior protection for graphite parts in the SiC Epitaxy Process for the processing of demanding semiconductor and composite semiconductor materials. The result is extended graphite component life, preservation of reaction stoichiometry, inhibition of impurity migration to epitaxy and crystal growth applications, resulting in increased yield and quality.
Our tantalum carbide (TaC) coatings protect critical furnace and reactor components at high temperatures (up to 2200°C) from hot ammonia, hydrogen, silicon vapors and molten metals. VeTek Semiconductor has a wide range of graphite processing and measurement capabilities to meet your customized requirements, so we can offer a fee-paying coating or full-service, with our team of expert engineers ready to design the right solution for you and your specific application.
Compound semiconductor crystals
VeTek Semiconductor can provide special TaC coatings for various components and carriers. Through VeTek Semiconductor's industry leading coating process,the TaC coating can obtain high purity, high temperature stablity and high chemical resistance,thereby improving the product quality of crystal TaC/GaN)and EPl layers, and extending the lifetime of critical reactor components.
Thermal insulators
SiC, GaN and AlN crystal growth components including crucibles, seed holders, deflectors and filters. Industrial assemblies including resistive heating elements, nozzles, shielding rings and brazing fixtures, GaN and SiC epitaxial CVD reactor components including wafer carriers, satellite trays, shower heads, caps and pedestals, MOCVD components.
Purpose:
● LED(Light Emitting Diode) Wafer Carrier
● ALD(Semiconductor) Susceptor
● EPI Susceptor(SiC Epitaxy Process)
Comparision of SiC Coating and TaC Coating:
|
|
SiC
|
TaC
|
|
Main Features
|
Ultra high purity,Excellent Plasma resistance
|
Excellent high temperature stability(high temperature process conformance)
|
|
Purity
|
>99.9999%
|
>99.9999%
|
|
Density (g/cm3)
|
3.21
|
15
|
|
Hardness (kg/mm2)
|
2900-3300
|
6.7-7.2
|
|
Resistivity [Ωcm]
|
0.1-15,000
|
<1
|
|
Thermal conductivity (W/m-K)
|
200-360
|
22
|
|
Coefficient of thermal expansion(10-6/℃)
|
4.5-5
|
6.3
|
|
Application
|
Semiconductor Equipment Ceramic jig(Focus Ring, Shower Head, Dummy Wafer)
|
SiC Single crystal growth, Epi, UV LED Equipment parts
|
