CVD TaC coated three-petal guide ring

Silicon carbide single crystal substrate material is a kind of crystal material, which belongs to wide bandgap semiconductor material. It has the advantages of high voltage resistance, high temperature resistance, high frequency, low loss, etc. It is a basic material for the preparation of high-power power electronic devices and microwave radio frequency devices. At present, the main methods for growing SiC crystals are physical vapor transport (PVT method), high temperature chemical vapor deposition (HTCVD method), liquid phase method, etc.

The Physical Vapor Transport (PVT) method is a well - established technique highly suitable for large - scale industrial production. In this process, a SiC seed crystal is positioned at the top of the crucible, while SiC powder, serving as the raw material, is placed at the crucible bottom. Under the conditions of high temperature and low pressure within a closed environment, the SiC powder sublimates. Driven by the temperature gradient and concentration difference, the sublimated species move upward towards the region near the seed crystal. Once reaching a supersaturated state, recrystallization occurs, allowing for precise control over the size and specific crystal type of the grown SiC crystals.

The CVD TaC coated three - petal guide ring serves multiple crucial functions. Primarily, it enhances fluid mechanics by guiding the gas flow, ensuring that the crystal growth area is exposed to a uniform atmosphere. Additionally, it effectively dissipates heat during the SiC crystal growth process. By maintaining the appropriate temperature gradient, it optimizes the growth conditions for SiC crystals and mitigates the risk of crystal defects caused by uneven temperature distribution.