CVD SiC coating Epitaxy susceptor

Veteksemicon's CVD SiC Coating Epitaxy Susceptor is a precision-engineered tool designed for semiconductor wafer processing. This SiC Coating Epitaxy Susceptor plays a vital role in promoting the growth of thin films, epilayers, and other coatings, and can precisely control temperature and material properties. Welcome your further inquiries.

Basic physical properties of CVD SiC coating:

CVD SiC Coating Epitaxy Susceptor Product Advantages:

●  Precise Deposition: Susceptor combines a highly thermally conductive graphite substrate with a SiC coating to provide a stable support platform for substrates (such as sapphire, SiC or GaN). Its high thermal conductivity (such as SiC is about 120 W/m·K) can quickly transfer heat and ensure uniform temperature distribution on the substrate surface, thereby promoting high-quality growth of the epitaxial layer.

●  Reduced Contamination: The SiC coating prepared by the CVD process has extremely high purity (impurity content <5 ppm) and is highly resistant to corrosive gases (such as Cl₂, NH₃), avoiding contamination of the epitaxial layer.

●  Durability: SiC's high hardness (Mohs hardness 9.5) and wear resistance reduce the mechanical loss of the base during repeated use and are suitable for high-frequency semiconductor production processes.

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