Web Menu

Product Search

Language

Products

China Graphite EPI Susceptor Manufacturer, Supplier, Factory

Assume full accountability to meet all requires of our purchasers; realize continual advancements by selling the advancement of our customers; grow to be the final permanent cooperative partner of consumers and maximize the interests of clientele for Graphite EPI Susceptor, CVD SiC coating Epi susceptor, SiC Coating Epitaxy susceptor, MOCVD LED Epi Susceptor, Wafer processing, Never-ending improvement and striving for 0% deficiency are our two main quality policies. Should you need anything, don't hesitate to contact us.
Graphite EPI Susceptor, We strongly believe that technology and service is our base today and quality will create our reliable walls of future. Only we've got better and better quality , could we achieve our customers and ourselves, too. Welcome customers all over the word to contact us for getting further business and reliable relationships. We've been always here working for your demands whenever you need to have.

Related Products

Hot Products

  • High purity SiC wafer boat carrier

    High purity SiC wafer boat carrier

    VeTek Semiconductor offers customized High purity SiC wafer boat carrier. Made of high purity silicon carbide, it features slots to hold the wafer in place, preventing it from sliding during processing. CVD SiC coating is also available if required. As a professional and strong semiconductor manufacturer and supplier, VeTek Semiconductor's High purity SiC wafer boat carrier is price competitive and high quality. VeTek Semiconductor looks forward to being your long-term partner in China.
  • Silicon Carbide Robot Arm

    Silicon Carbide Robot Arm

    Our silicon carbide (SiC) robotic arm is designed for high-performance wafer handling in advanced semiconductor manufacturing. Made of high-purity silicon carbide, this robotic arm offers exceptional resistance to high temperatures, plasma corrosion, and chemical attack, ensuring reliable operation in demanding cleanroom environments. Its exceptional mechanical strength and dimensional stability enable precise wafer handling while minimizing contamination risks, making it an ideal choice for MOCVD, epitaxy, ion implantation, and other critical wafer handling applications. We welcome your inquiries.
  • Tantalum Carbide Coating Support

    Tantalum Carbide Coating Support

    As a professional Tantalum Carbide Coating Support product manufacturer and factory in China, VeTek Semiconductor Tantalum Carbide Coating Support is usually used for surface coating of structural components or support components in semiconductor equipment, especially for surface protection of key equipment components in semiconductor manufacturing processes such as CVD and PVD. Welcome your further consultation.
  • SiC coated Wafer Holder

    SiC coated Wafer Holder

    VeTek Semiconductor is a professional manufacturer and leader of SiC coated wafer holder products in China. SiC coated wafer holder is a wafer holder for the epitaxy process in semiconductor processing. It is an irreplaceable device that stabilizes the wafer and ensures the uniform growth of the epitaxial layer. Welcome your further consultation.
  • SiC Crystal Growth Porous Graphite

    SiC Crystal Growth Porous Graphite

    As a China leading SiC Crystal Growth Porous Graphite manufacturer , VeTek Semiconductor has been focusing on various Porous Graphite products for many years, such as Porous graphite crucible, High Purity Porous Graphite's investment and R&D, our Porous Graphite products have won high praise from European and American customers. Looking forward to your contact.
  • SiC Crystal Growth New Technology

    SiC Crystal Growth New Technology

    Vetek Semiconductor's ultra-high purity silicon carbide (SiC) formed by chemical vapor deposition (CVD) is recommanded to be used as a source material for growing silicon carbide crystals by physical vapor transport (PVT). In SiC Crystal Growth New Technology, the source material is loaded into a crucible and sublimated onto a seed crystal. Use the high purity CVD-SiC blocks to be as a source for growing SiC crystals. Welcome to establish a partnership with us.

  • What is the temperature gradient of the thermal field of a single crystal furnace?

    The article explains the temperature gradient in a single-crystal furnace. It covers the static and dynamic heat fields during crystal growth, the solid-liquid interface, and the temperature gradient's role in solidification.

  • Three SiC single crystal growth technologies

    The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

  • What is SiC Ceramic?

    SiC ceramic is a ceramic material produced by the reaction of silicon (Si) and carbon (C) elements, featuring extremely high hardness, heat resistance and chemical stability

  • Research on SIC Wafer Carrier Technology

    ​SiC wafer carriers, as key consumables in the third-generation semiconductor industry chain, their technical characteristics directly affect the yield of epitaxial growth and device manufacturing. With the surging demand for high-voltage and high-temperature devices in industries such as 5G base stations and new energy vehicles, the research and application of SiC wafer carriers are now facing significant development opportunities.

  • 8-inch SiC epitaxial furnace and homoepitaxial process research

    8-inch SiC epitaxial furnace and homoepitaxial process research

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept