ALD Planetary Susceptor

As the professional manufacturer, Vetek Semiconductor would like to introduce you SiC coated Atomic Layer Deposition Planetary Susceptor.

The ALD process is also known as atomic layer epitaxy. VetekSemicon has worked closely with leading ALD system manufacturers to pioneer the development and manufacture of cutting-edge SiC-coated ALD planetary susceptors. These innovative susceptors are carefully designed to fully meet the stringent requirements of the ALD process and ensure uniform gas flow distribution across the substrate.

In addition, VetekSemicon guarantees high purity during the deposition cycle by using a high-purity CVD SiC coating (purity reaches 99.99995%). This high-purity SiC coating not only improves process reliability, but also improves the overall performance and repeatability of the ALD process in different applications.

Relying on self-developed CVD silicon carbide deposition furnace (patented technology) and a number of coating process patents (such as gradient coating design, interface combination strengthening technology), our factory achieved the following breakthroughs:

Customized services: Support customers to specify imported graphite materials such as Toyo Carbon and SGL carbon.

Quality certification: The product has passed the SEMI standard test, and the particle shedding rate is <0.01%, meeting the advanced process requirements below 7nm.

Advantages of ALD Technology Overview:

● Precise Thickness Control: Achieve sub-nanometer film thickness with excellent repeatability by controlling deposition cycles.

● High-temperature resistant: It can work stably for a long time in a high-temperature environment above 1200℃, with excellent thermal shock resistance and no risk of cracking or peeling. 

   The thermal expansion coefficient of the coating matches that of the graphite substrate well, ensuring uniform heat field distribution and reducing silicon wafer deformation.

● Surface Smoothness: Perfect 3D conformality and 100% step coverage ensure smooth coatings that follow the substrate curvature completely.

● Resistant to corrosion and plasma erosion: SiC coatings effectively resist the erosion of halogen gases (such as Cl₂, F₂) and plasma, suitable for etching, CVD and other harsh process environments.

● Wide Applicability: Coatable on various objects from wafers to powders, suitable for sensitive substrates.

● Customizable Material Properties: Easy customization of material properties for oxides, nitrides, metals, etc.

● Wide Process Window: Insensitivity to temperature or precursor variations, conducive to batch production with perfect coating thickness uniformity.

Application scenario:

1. Semiconductor manufacturing equipment

Epitaxy: As the core carrier of the MOCVD reaction cavity, it ensures uniform heating of the wafer and improves the quality of the epitaxy layer.

Etching and deposition process: Electrode components used in Dry Etching and atomic layer deposition (ALD) equipment, which withstand high-frequency plasma bombardment 1016.

2. Photovoltaic industry

Polysilicon ingot furnace: As a thermal field support component, reduce the introduction of impurities, improve the purity of silicon ingot, and help efficient solar cell production.

As a leading Chinese ALD Planetary Susceptor manufacturer and supplier, Veteksemicon is committed to providing you with advanced thin film deposition technology solutions. Your further inquiries are welcome.

Basic physical properties of CVD SiC coating: