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ALD Process, Customer's satisfaction is always our quest, creating value for customers is always our duty, a long term mutual-beneficial business relationship is what we've been doing for. We are an absolutely reliable partner for yourself in China. Of course, other services, like consulting, can be offered too.

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  • CVD SiC Coating Baffle

    CVD SiC Coating Baffle

    Vetek's CVD SiC Coating Baffle is mainly used in Si Epitaxy. It is usually used with silicon extension barrels. It combines the unique high temperature and stability of the CVD SiC Coating Baffle, which greatly improves the uniform distribution of airflow in semiconductor manufacturing. We believe that our products can bring you Advanced Technology and High-Quality Product Solutions.
  • CVD TaC Coating Crucible

    CVD TaC Coating Crucible

    VeTek Semiconductor is a professional manufacturer and leader of CVD TaC Coating Crucible products in China. CVD TaC Coating Crucible is based on tantalum carbon (TaC) coating. The tantalum carbon coating is evenly covered on the surface of the crucible through chemical vapor deposition (CVD) process to enhance its heat resistance and corrosion resistance. It is a material tool specially used in high temperature extreme environments. Welcome your further consultation.
  • SiC Coated Epi Susceptor

    SiC Coated Epi Susceptor

    As the top domestic manufacturer of silicon carbide and tantalum carbide coatings, VeTek Semiconductor is able to provide precision machining and uniform coating of SiC Coated Epi Susceptor, effectively controlling the purity of coating and product below 5ppm. The product life is comparable to that of SGL. Welcome to inquire us.
  • Tantalum Carbide Coated Halfmoon Part for LPE

    Tantalum Carbide Coated Halfmoon Part for LPE

    VeTek Semiconductor is a leading supplier of Tantalum Carbide Coated Halfmoon Part for LPE in China, focusing on TaC coating technology for many years. Our Tantalum Carbide Coated Halfmoon Part for LPE is designed for liquid phase epitaxy process and can withstand high temperature of over 2000 degrees Celsius. With excellent material performance and process innovation, our product life is at the leading level in the industry. VeTek Semiconductor looks forward to being your long-term partner in China.
  • Graphite boat for PECVD

    Graphite boat for PECVD

    Veteksemicon graphite boat for PECVD is precision-machined from high-purity graphite and designed specifically for plasma-enhanced chemical vapor deposition processes. Leveraging our deep understanding of semiconductor thermal field materials and precision machining capabilities, we offer graphite boats with exceptional thermal stability, excellent conductivity, and a long service life. These boats are designed to ensure highly uniform thin film deposition across every wafer in the demanding PECVD process environment, improving process yield and productivity.
  • High-Purity Opaque Quartz Shield & Shutter For MOCVD

    High-Purity Opaque Quartz Shield & Shutter For MOCVD

    The high-temperature and chemically reactive environments of MOCVD, the protection of the reaction chamber and the precision of process control are paramount. VETEK provides premium Opaque (Milky White) Quartz components, specifically designed to act as the "cleanroom" and "precision gate" within your semiconductor equipment. These components offer a cost-effective yet high-performance solution for managing thermal radiation and preventing contamination.
  • Related Blog
  • Reviews

  • What is the difference between epitaxy and ALD?

    The main difference between epitaxy and atomic layer deposition (ALD) lies in their film growth mechanisms and operating conditions. Epitaxy refers to the process of growing a crystalline thin film on a crystalline substrate with a specific orientation relationship, maintaining the same or similar crystal structure. In contrast, ALD is a deposition technique that involves exposing a substrate to different chemical precursors in sequence to form a thin film one atomic layer at a time.

  • Is SiC Diffusion Furnace Tube the Ultimate Solution for High-Temperature Semiconductor Processing

    The SiC Diffusion Furnace Tube has become a critical component in modern semiconductor manufacturing due to its exceptional thermal stability, chemical resistance, and long service life. This article explores how VeTek delivers advanced SiC solutions that enhance diffusion furnace performance, improve wafer quality, and reduce overall production costs. You will learn its structure, advantages, applications, technical specifications, and why it is increasingly replacing traditional quartz and alumina tubes.

  • What is Silicon Carbide Crystal Growth?

    This blog takes "What is Silicon Carbide Crystal Growth?" as its theme and provides a detailed analysis from four dimensions: The Principle of Silicon Carbide Crystal Growth, The Crystal Structure of SiC, Physical Vapor Transport Method (PVT) and the Step Flow Growth to Grow Single Crystal.

  • Why Is Hyperpure Graphite Rigid Felt Essential for High-Temperature Semiconductor Manufacturing

    As semiconductor manufacturing moves toward increasingly advanced process nodes, material purity and thermal stability have become more critical than ever. Hyperpure graphite rigid felt has emerged as one of the most reliable insulation materials for crystal growth furnaces, epitaxial reactors, silicon carbide production systems, and other high-temperature applications.

  • Is Porous Graphite The Key To Faster Charging Batteries

    We’ve all felt that moment of panic. Your phone battery is at 5%, you have minutes to spare, and every second plugged in feels like an eternity. What if the secret to ending this anxiety lies not in a completely new chemistry, but in reimagining a fundamental material within the battery itself? For two decades at the forefront of tech, I’ve seen trends come and go. But the buzz around Porous Graphite feels different. It isn't just an incremental step; it represents a fundamental shift in how we approach energy storage design.

  • Why does SiC coated Graphite Susceptor fail? - VeTek Semiconductor

    During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

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