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Wangda Road, Ziyang Street, Wuyi County, Jinhua City, Zhejiang Province, China
● Isotropic Behavior: Uniform physical properties (e.g., thermal/electrical conductivity, mechanical strength) in all three dimensions (x, y, z), with no directional dependency.
● High Purity & Thermal Stability: Manufactured via advanced processes like isostatic pressing, offering ultra-low impurity levels (ash content at ppm scale) and enhanced strength at high temperatures (up to 2000°C+).
● Precision Machinability: Easily fabricated into complex geometries, ideal for semiconductor wafer processing components (e.g., heaters, insulators).
Physical properties of Isostatic graphite Property Unit
Typical Value
Bulk Density g/cm³
1.83
Hardness
HSD
58 Electrical Resistivity μΩ.m
10 Flexural Strength
MPa
47 Compressive Strength
MPa
103 Tensile Strength MPa
31 Young' s Modulus
GPa
11.8 Thermal Expansion(CTE)
10-6K-1
4.6 Thermal Conductivity
W·m-1·K-1 130 Average Grain Size μm
8-10 Porosity
%
10 Ash Content
ppm
≤5 (after purified)
● Silicon Infusion: Infused with silicon to form a silicon carbide (SiC) composite layer, significantly improving oxidation resistance and corrosion durability in extreme environments.
● Potential Anisotropy: May retain some directional properties from the base graphite, depending on the siliconization process.
● Adjusted Conductivity: Reduced electrical conductivity compared to pure graphite but enhanced durability in harsh conditions.
Main parameters of Siliconized graphite
Property
Typical Value
Density
2.4-2.9 g/cm³
Porosity
<0.5%
Compressive strength
>400 MPa Flexural strength
>120 MPa
Thermal conductivity
120 W/mK
Thermal expansion coefficient
4.5×10-6
Elastic modulus
120 GPa
Impact strength
1.9KJ/m²
Water lubricated friction
0.005
Dry friction coefficient
0.05
Chemical stability Various salts, organic solvents,
strong acids (HF, HCl, H₂SO4,HNO₃)
Long-term stable use temperature
800℃ (oxidation atmosphere)
2300℃ (inert or vacuum atmosphere)
Electrical resistivity
120*10-6Ωm
✔ Siliconized Graphite:● Semiconductor Manufacturing: Crucibles and heating elements in single-crystal silicon growth furnaces, leveraging its purity and uniform thermal distribution.
● Solar Energy: Thermal insulation components in photovoltaic cell production (e.g., vacuum furnace parts).
● Nuclear Technology: Moderators or structural materials in reactors due to radiation resistance and thermal stability.
● Precision Tooling: Molds for powder metallurgy, benefiting from high dimensional accuracy.
● High-Temperature Oxidation Environments: Aerospace engine components, industrial furnace linings, and other oxygen-rich, high-heat applications.
● Corrosive Media: Electrodes or seals in chemical reactors exposed to acids/alkalis.
● Battery Technology: Experimental use in lithium-ion battery anodes to improve lithium-ion intercalation (still R&D-focused).
● Semiconductor Equipment: Electrodes in plasma etching tools, combining conductivity with corrosion resistance.
✔ Isotropic Graphite
Strengths:
● Uniform Performance: Eliminates directional failure risks (e.g., thermal stress cracks).
● Ultra-High Purity: Prevents contamination in sensitive processes like semiconductor fabrication.
● Thermal Shock Resistance: Stable under rapid temperature cycling (e.g., CVD reactors).
Limitations:
● Higher production costs and stringent machining requirements.
✔ Siliconized Graphite
Strengths:
● Oxidation Resistance: SiC layer blocks oxygen diffusion, extending lifespan in high-heat oxidative environments.
● Enhanced Durability: Improved surface hardness and wear resistance.
● Chemical Inertness: Superior resistance to corrosive media vs. standard graphite.
Limitations:
● Reduced electrical conductivity and higher manufacturing complexity.
✔ Isotropic Graphite:
Dominates applications requiring uniformity and purity (semiconductors, nuclear tech).
✔ Siliconized Graphite:
Excels in extreme conditions (aerospace, chemical processing) due to silicon-enhanced durability.
+86-579-87223657
Wangda Road, Ziyang Street, Wuyi County, Jinhua City, Zhejiang Province, China
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