SiC Coating Collector Bottom

SiC Coating Collector Bottom

With our expertise in CVD SiC coating manufacturing, VeTek Semiconductor proudly presents Aixtron SiC Coating Collector Bottom,center and top. These SiC Coating Collector Bottom is constructed using high purity graphite and are coated with CVD SiC, ensuring impurity below 5ppm. Feel free to reach out to us for further information and inquiries.

VeTek Semiconductor is manufacturer committed to providing high quality CVD TaC Coating and CVD SiC Coating Collector Bottom and work closely with Aixtron equipment to meet the needs of our customers. Whether in process optimization or new product development, we are ready to provide you with technical support and answer any questions you may have.

Product core function

Process stability guarantee

Temperature gradient control: ±1.5℃/cm@1200℃


Flow field optimization: The special channel design makes the reaction gas distribution uniformity up to 92.6%


Equipment protection mechanism

Dual protection:


Thermal shock buffer: withstand 10℃/s rapid temperature change


Particle interception: Trapping > 0.3μm sediment particles


In the field of cutting-edge technology

Direction of application
Specific process parameters
Customer value
Grade IGBT
10^17/cm³ doping uniformity  Yield increased by 8-12%
5G RF device
Surface roughness < 0.15nm Ra
Carrier mobility increased by 15%
PV HJT equipment  Anti-PID aging test > 3000 cycles
Equipment maintenance cycle extended to 9000 hours

Whole process quality control

Production traceability system

Source of raw materials: Tokai/Toyo Graphite from Japan,SGL  graphite from Germany

Digital twin monitoring: Each component is matched to an independent process parameter database


Application scenario:

Third generation semiconductor manufacturing

Scenario: 6-inch SiC epitaxial growth (100-150μm thickness control)

Compatible model: Aixtron G5 WW/CRIUS II




By using Aixtron SiC coated Collector Top, Collector Center and SiC Coated Collector, thermal management and chemical protection in semiconductor manufacturing processes can be achieved, the film growth environment can be optimized, and the quality and consistency of the film can be improved. The combination of these components in Aixtron equipment ensures stable process conditions and efficient semiconductor production.




SEM DATA OF CVD SIC FILM

SEM DATA OF CVD SIC FILM


Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain SiZe 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young' s Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1


Overview of the Semiconductor Chip Epitaxy Industry Chain

SiC Epitaxy Si Epitaxy GaN Epitaxy


VeTek Semiconductor SiC Coating Collector Bottom Production Shop

SiC Coated Wafer CarrierAixtron Collector equipmentCVD SiC Focus RingSemiconductor process Equipment



Hot Tags: SiC Coating Collector Bottom
Send Inquiry
Contact Info
For inquiries about Silicon Carbide Coating, Tantalum Carbide Coating, Special Graphite or price list, please leave your email to us and we will be in touch within 24 hours.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept