MOCVD Epitaxial Susceptor for 4" Wafer

VeTek Semiconductor is a professional leader China MOCVD Epitaxial Susceptor for 4" wafer manufacturer with high quality and reasonable price. Welcome to contact us.The MOCVD Epitaxial Susceptor for 4" wafer is a critical component in the metal-organic chemical vapor deposition (MOCVD) process, which is widely used for the growth of high-quality epitaxial thin films, including gallium nitride (GaN), aluminum nitride (AlN), and silicon carbide (SiC). The susceptor serves as a platform to hold the substrate during the epitaxial growth process and plays a crucial role in ensuring uniform temperature distribution, efficient heat transfer, and optimal growth conditions.

MOCVD Epitaxial Susceptor for 4" wafer is typically made of high-purity graphite, silicon carbide, or other materials with excellent thermal conductivity, chemical inertness, and resistance to thermal shock.

Applications:

MOCVD epitaxial susceptors find applications in various industries, including:

Power electronics: growth of GaN-based high-electron-mobility transistors (HEMTs) for high-power and high-frequency applications.

Optoelectronics: growth of GaN-based light-emitting diodes (LEDs) and laser diodes for efficient lighting and display technologies.

Sensors: growth of AlN-based piezoelectric sensors for pressure, temperature, and acoustic wave detection.

High-temperature electronics: growth of SiC-based power devices for high-temperature and high-power applications.

Product parameter of the MOCVD Epitaxial Susceptor for 4" Wafer

Note: Before coating, we will do first purification, after coating, will do second purification.

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