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MOCVD Susceptor
  • MOCVD SusceptorMOCVD Susceptor
  • MOCVD SusceptorMOCVD Susceptor

MOCVD Susceptor

MOCVD Susceptor is characteristed with planetary disc and profesional for its stable performance in epitaxy. Vetek semiconductor has rich experience in machining and CVD SiC coating of this product, welcome to communicate with us about real cases.

As the CVD SiC coating manufacturer, VeTek Semiconductor has the ability to provide you Aixtron G5 MOCVD Susceptors which is made of high purity graphite and CVD SiC coating(below 5ppm). 


Micro LEDs technology is disrupting the existing LED ecosystem with methods and approaches that have until now only been seen in the LCD or semiconductor industries, and the Aixtron G5 MOCVD system perfectly supports these stringent extensional requirements. The Aixtron G5 is one of the most powerful MOCVD reactors designed primarily for silicon-based GaN epitaxy growth.


It is essential that all epitaxial wafers produced have a very tight wavelength distribution and very low surface defect levels, which requires innovative MOCVD technology.

Aixtron G5 is a horizontal Planetary disk epitaxy system, mainly Planetary disc, MOCVD susceptor, cover ring, ceiling, supporting ring, cover disc, exhuast collector, pin washer, collector inlet ring, etc., The main product materials are CVD SiC coating+high purity graphite, semiconductor quartz, CVD TaC coating+high purity graphite, rigid felt and other materials.


MOCVD Susceptor features are as follows


✔ Base material protection: CVD SiC coating acts as a protective layer in the epitaxial process, which can effectively prevent the erosion and damage of the external environment to the base material, provide reliable protective measures, and extend the service life of the equipment.

✔ Excellent thermal conductivity: The CVD SiC coating has excellent thermal conductivity and can quickly transfer heat from the base material to the coating surface, improving the thermal management efficiency during epitaxy and ensuring that the equipment operates within the appropriate temperature range.

✔ Improve film quality: CVD SiC coating can provide a flat, uniform surface, providing a good foundation for film growth. It can reduce the defects caused by lattice mismatch, improve the crystallinity and quality of the film, and thus improve the performance and reliability of the epitaxial film.

Basic physical properties of CVD SiC coating:

SEM DATA OF CVD SIC FILM


Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density 3.21 g/cm³
SiC coating Hardness 2500 Vickers hardness(500g load)
Grain Size 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700 ℃
Flexural Strength 415 MPa RT 4-point
Young's Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1


Overview of the Semiconductor Chip Epitaxy Industry Chain:

SiC Epitaxy Si Epitaxy GaN Epitaxy

Hot Tags: MOCVD Susceptor
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