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China SiC epitaxy Manufacturer, Supplier, Factory

The customer satisfaction is our primary target. We uphold a consistent level of professionalism, quality, credibility and service for SiC epitaxy, GaN epitaxy, Wafer epitaxial susceptor, CVD SiC coating, High purity graphite, Honesty is our principle, professional operation is our work, service is our goal, and customers' satisfaction is our future!
SiC epitaxy, We hope we can establish long-term cooperation with all of the customers, and hope we can improve competitiveness and achieve the win-win situation together with the customers. We sincerely welcome the customers from all over the world to contact us for anything you need to have!Welcome all customers both at home and abroad to visit our factory. We hope to have win-win business relationships with you, and create a better tomorrow.

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  • silicon carbide ceramic coating graphite heater

    silicon carbide ceramic coating graphite heater

    VeTek semiconductor's Silicon Carbide Ceramic Coating Graphite Heater is a high-performance heater made of graphite substrate and coated with silicon carbon ceramic (SiC) coating on its surface. With its composite material design, this product provides excellent heating solutions in semiconductor manufacturing. Welcome your inquiry.
  • SiC Coated Graphite Barrel Susceptor for EPI

    SiC Coated Graphite Barrel Susceptor for EPI

    The barrel type epitaxial wafer heating base is a product with complicated processing technology, which is very challenging to machining equipment and ability. Vetek semiconductor has advanced equipment and rich experience in processing SiC coated graphite barrel susceptor for EPI, can provide the same as the original factory life, more cost-effective epitaxial barrels.If you are interested in our datas,pls no hesitate to contact us.
  • GaN on SiC epi susceptor

    GaN on SiC epi susceptor

    GaN on SiC epi susceptor plays a vital role in semiconductor processing through its excellent thermal conductivity, high temperature processing ability and chemical stability, and ensures the high efficiency and material quality of the GaN epitaxial growth process. VeTek Semiconductor is a China professional manufacturer of GaN on SiC epi susceptor ,We sincerely look forward to your further consultation.
  • GaN epitaxial susceptor

    GaN epitaxial susceptor

    As a leading GaN epitaxial susceptor supplier and manufacturer in China, VeTek semiconductor GaN epitaxial susceptor is a high-precision susceptor designed for GaN epitaxial growth process, used to support epitaxial equipment such as CVD and MOCVD. In the manufacturing of GaN devices (such as power electronic devices, RF devices, LEDs, etc.), GaN epitaxial susceptor carries the substrate and achieves high-quality deposition of GaN thin films under high temperature environment. Welcome your further inquiry.
  • TaC Coating Susceptor

    TaC Coating Susceptor

    VeTek Semiconductor presents the TaC Coating Susceptor, With its exceptional TaC coating, this susceptor offers a multitude of advantages that set it apart from conventional solutions.Integrating seamlessly into existing systems, the TaC Coating Susceptor from VeTek Semiconductor guarantees compatibility and efficient operation. Its reliable performance and high-quality TaC coating consistently deliver exceptional results in SiC epitaxy processes.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
  • SiC Coating Collector Bottom

    SiC Coating Collector Bottom

    With our expertise in CVD SiC coating manufacturing, VeTek Semiconductor proudly presents Aixtron SiC Coating Collector Bottom,center and top. These SiC Coating Collector Bottom is constructed using high purity graphite and are coated with CVD SiC, ensuring impurity below 5ppm. Feel free to reach out to us for further information and inquiries.

  • Summary of Silicon Carbide (SiC) Manufacturing Process

    Silicon carbide abrasives are typically produced using quartz and petroleum coke as primary raw materials. In the preparatory stage, these materials undergo mechanical processing to achieve the desired particle size before being chemically proportioned into furnace charge.

  • From the manufacturing process of electrostatic suction cups to mass production manufacturers

    The Dechuck principle of the Electrostatic Chuck is a key part of its workflow that involves electrostatic force elimination and wafer release mechanisms.

  • ALD Atomic Layer Deposition Recipe

    Spatial ALD, spatially isolated atomic layer deposition. The wafer moves between different positions and is exposed to different precursors at each position. The figure below is a comparison between traditional ALD and spatially isolated ALD.

  • Silicon carbide nanomaterials

    Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

  • How to achieve high quality crystal growth? - SiC crystal growth furnace

    With the theme of "How to achieve high quality crystal growth? - SiC crystal growth furnace", this blog conducts a detailed analysis from four dimensions: the basic principle of silicon carbide crystal growth furnace, the structure of the silicon carbide crystal growth furnace, technical difficulties of silicon carbide crystal growth furnace, and raw materials for growing high-quality SiC crystals.

  • The Development History of 3C SiC

    Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

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GaN on SiC EpitaxyLPE SiC epitaxyLPE SiC epitaxy processSiC EpitaxySiC Epitaxy ChuckSiC epitaxy crucibleSiC Epitaxy ProcessSiC epitaxy processesSiC Epitaxy Wafer Carrier

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