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China SiC epitaxy Manufacturer, Supplier, Factory

The customer satisfaction is our primary target. We uphold a consistent level of professionalism, quality, credibility and service for SiC epitaxy, GaN epitaxy, Wafer epitaxial susceptor, CVD SiC coating, High purity graphite, Honesty is our principle, professional operation is our work, service is our goal, and customers' satisfaction is our future!
SiC epitaxy, We hope we can establish long-term cooperation with all of the customers, and hope we can improve competitiveness and achieve the win-win situation together with the customers. We sincerely welcome the customers from all over the world to contact us for anything you need to have!Welcome all customers both at home and abroad to visit our factory. We hope to have win-win business relationships with you, and create a better tomorrow.

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  • High Purity Quartz Crucible

    High Purity Quartz Crucible

    High purity quartz crucible is essential core component in advanced semiconductor manufacturing processes, especially for applications that require extremely high thermal stability, chemical purity, and dimensional accuracy. Veteksemicon offers superior high purity quartz crucibles designed to meet the extreme demands of semiconductor processes.
  • Porous SiC Vacuum Chuck

    Porous SiC Vacuum Chuck

    Vetek Semiconductor's Porous SiC Vacuum Chuck is usually used in key components of semiconductor manufacturing equipment, especially when it comes to CVD and PECVD processes. Vetek Semiconductor specializes in manufacturing and supplying high-performance Porous SiC Vacuum Chuck. Welcome for your further inquiries.
  • EPI susceptor

    EPI susceptor

    The EPI susceptor is designed for the demanding epitaxial equipment applications. Its high-purity silicon carbide (SiC) coated graphite structure offers excellent heat resistance, uniform thermal uniformity for consistent epitaxial layer thickness and resistance, and long-lasting chemical resistance. We look forward to cooperating with you.
  • PSS Etching Carrier Plate for Semiconductor

    PSS Etching Carrier Plate for Semiconductor

    VeTek Semiconductor's PSS Etching Carrier Plate for Semiconductor is a high-quality, ultra-pure graphite carrier designed for wafer handling processes. Our carriers have excellent performance and can perform well in harsh environments, high temperatures and harsh chemical cleaning conditions. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.You are welcome to come to China to visit our factory and learn more about our technology and products.
  • CVD SiC Focus Ring

    CVD SiC Focus Ring

    VeTek Semiconductor is a leading domestic manufacturer and supplier of CVD SiC focus rings, dedicated to providing high-performance, high-reliability product solutions for the semiconductor industry. VeTek Semiconductor's CVD SiC focus rings use advanced chemical vapor deposition (CVD) technology, have excellent high temperature resistance, corrosion resistance and thermal conductivity, and are widely used in semiconductor lithography processes. Your inquiries are always welcome.
  • High purity graphite ring

    High purity graphite ring

    High purity graphite ring is suitable for GaN epitaxial growth processes. Their excellent stability and superior performance have made them widely used. VeTek Semiconductor produces and manufactures world-leading High purity graphite ring to help the GaN epitaxy industry continue to progress. VeTekSemi looks forward to becoming your partner in China.

  • Silicon carbide nanomaterials

    Silicon carbide nanomaterials (SiC) are materials with at least one dimension at the nanometer scale (1-100nm). These materials can be zero-, one-, two-, or three-dimensional and have diverse applications.

  • Diamond - the future star of semiconductors

    Diamond, a potential fourth-generation "ultimate semiconductor," is gaining attention in semiconductor substrates due to its exceptional hardness, thermal conductivity, and electrical properties. While its high cost and production challenges limit its use, CVD is the preferred method. Despite doping and large-area crystal challenges, diamond holds promise.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • How to prepare CVD TaC coating? - Veteksemicon

    This article introduces the product characteristics of CVD TaC coating, the process of preparing CVD TaC coating using the CVD method, and the basic method for surface morphology detection of the prepared CVD TaC coating.

  • How to solve the problem of sintering cracks in silicon carbide ceramics? - VeTek semiconductor

    This article mainly describes the broad application prospects of silicon carbide ceramics. It also focuses on the analysis of the causes of sintering cracks in silicon carbide ceramics and the corresponding solutions.

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GaN on SiC EpitaxyLPE SiC epitaxyLPE SiC epitaxy processSiC EpitaxySiC epitaxy crucibleSiC Epitaxy ProcessSiC epitaxy processesSiC Epitaxy Wafer Carrier

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