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SiC Block
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SiC Block

Veteksemicon’s SiC Block is designed for high-efficiency grinding and thinning of silicon and sapphire wafers. With excellent thermal conductivity (≥120 W/m·K), high thermal shock resistance, and superior wear resistance (Mohs ≥9), our blocks improve process stability and reduce tool change frequency. Available in sizes from 120mm to 480mm, with customized options and fast delivery to meet diverse production needs.

Veteksemicon offers high-performance Silicon Carbide (SiC) blocks, engineered to meet the rigorous demands of advanced grinding and thinning processes in the semiconductor and LED industries.


Ⅰ. Key Applications


Veteksemicon SiC blocks are ideal for:


Grinding Process of Semiconductor Silicon Wafers: Achieve ultra-flat and damage-free surfaces critical for subsequent fabrication steps and device performance.

Grinding Process of LED Sapphire Wafers: Ensure precise material removal and excellent surface finish on hard and brittle sapphire substrates, crucial for LED efficiency.

Thinning Process of LED Wafers: Facilitate efficient and controlled thinning, optimizing the optical and electrical properties of LED devices.


Ⅱ. Essential Features for Superior Performance


Our SiC blocks are meticulously crafted to deliver outstanding results, featuring:


Good Thermal Conductivity: Efficiently dissipates heat generated during grinding, preventing thermal damage to wafers and maintaining process stability.

Good Thermal Shock Resistance: Withstands rapid temperature changes inherent in grinding processes, extending the lifespan of the block and reducing downtime. Our SiC blocks typically exhibit a thermal shock resistance of up to 250∘C without significant degradation.

Good Abrasion Resistance: Provides exceptional hardness and wear resistance, ensuring consistent material removal rates and extended block life. Our SiC material typically has a Vickers hardness of approximately 2500 HV.


Ⅲ. Technical Specifications (Typical Values)


Here are some typical physical properties of our SiC blocks:


Material: Sintered Silicon Carbide (SiC)

Density: >3.10 g/cm3

Porosity: <0.1%

Flexural Strength (MOR): >450 MPa

Young's Modulus: >400 GPa

Thermal Expansion Coefficient: ≈4.5×10−6/C (at 20−1000C)


Ⅳ. Why Choose Vetek SiC Blocks?


Veteksemicon is committed to providing a superior product and service experience. Here's why we are the preferred choice for your SiC block needs:


Diverse Specifications & Customization: We offer a wide range of standard specifications to fit various equipment and processes. Beyond our extensive stock, we provide customized services to meet your unique requirements, ensuring a perfect fit for your specialized applications.


Stable Quality & Fast Delivery: Our manufacturing processes adhere to stringent quality control standards, ensuring consistent performance with every block. We maintain a robust supply chain to guarantee fast and reliable delivery, minimizing your lead times.


Physical properties of Sintered Silicon Carbide

Physical properties of Sintered Silicon Carbide
Property
Typical Value
Chemical Composition
SiC>95%, Si<5%
Bulk Density
>3.1 g/cm³
Apparent porosity
<0.1%
Modulus of rupture at 20℃
450 MPa
Modulus of rupture at 1200℃
470 MPa
Hardness at 20℃
2400 Kg/mm²
Fracture toughness at 20%
3.3 MPa · m1/2
Thermal Conductivity at 1200℃
45 w/m .K
Thermal expansion at 20-1200℃
4.51 ×10-6/℃
Max.working temperature
1400℃
Thermal shock resistance at 1200℃
Good

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Hot Tags: LED wafer thinning, sapphire wafer grinding, SiC grinding plate, semiconductor back-end process
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