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we can easily provide top quality solutions, competitive value and best client company. Our destination is "You come here with difficulty and we provide you a smile to take away" for SiC block, Silicon carbide block, Wafer grinding block, Silicon carbide bulk, Our ultimate objective is always to rank as a top brand also to lead as a pioneer inside our field. We're sure our prosperous experience in tool generation will gain customer's trust, Wish to co-operate and co-create an even better upcoming with you!
SiC block, Our company mission is that providing high quality and beautiful solutions with reasonable price and strive to gain 100% good reputation from our clients. We believe Profession achieves excellence! We welcome you to cooperate with us and grow up together.

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  • MOCVD SiC coating susceptor

    MOCVD SiC coating susceptor

    VeTek Semiconductor is a leading manufacturer and supplier of MOCVD SiC coating susceptors in China, focusing on the R&D and production of SiC coating products for many years. Our MOCVD SiC coating susceptors have excellent high temperature tolerance, good thermal conductivity, and low thermal expansion coefficient, playing a key role in supporting and heating silicon or silicon carbide (SiC) wafers and uniform gas deposition. Welcome to consult further.
  • SiC coated epitaxial reactor chamber

    SiC coated epitaxial reactor chamber

    Veteksemicon SiC Coated Epitaxial Reactor chamber is a core component designed for demanding semiconductor epitaxial growth processes. Utilizing advanced chemical vapor deposition (CVD), this product forms a dense, high-purity SiC coating on a high-strength graphite substrate, resulting in superior high-temperature stability and corrosion resistance. It effectively resists the corrosive effects of reactant gases in high-temperature process environments, significantly suppresses particulate contamination, ensures consistent epitaxial material quality and high yield, and substantially extends the maintenance cycle and lifespan of the reaction chamber. It is a key choice for improving the manufacturing efficiency and reliability of wide-bandgap semiconductors such as SiC and GaN.
  • Silicon Carbide Cantilever Paddle

    Silicon Carbide Cantilever Paddle

    VeTek Semiconductor's Silicon Carbide Cantilever Paddle is an important component in the semiconductor manufacturing process, especially suitable for diffusion furnaces or LPCVD furnaces in high-temperature processes such as diffusion and RTP. Our Silicon Carbide Cantilever Paddle is carefully designed and manufactured with excellent high-temperature resistance and mechanical strength, and can safely and reliably transport wafers to the process tube under harsh process conditions for various high-temperature processes such as diffusion and RTP. We look forward to becoming your long-term partner in China.Feel free to inquire us.
  • Pull Silicon Single Crystal Jig

    Pull Silicon Single Crystal Jig

    Pull Silicon Single Crystal Jig is designed to ensure the purity of wafers and precise control of hot zones during crystallization, offering sustainable and efficient solutions for the photovoltaic industry.Veteksemicon is looking forward to setting long-term cooperation with you.
  • Soft Felt for Furnace Heat Insulation

    Soft Felt for Furnace Heat Insulation

    VeTek Semiconductor is committed to providing high-quality Soft Felt for Furnace Heat Insulation. It is made of carbon fiber or graphite fiber interwoven with each other, and has excellent thermal insulation and high temperature resistance. Whether it is in industrial heating furnaces, high-temperature equipment or other occasions that require thermal insulation, our Soft Felt for Furnace Heat Insulation can meet your needs. VeTek Semiconductor looks forward to establishing a long-term cooperative relationship with you.
  • High purity quartz boat

    High purity quartz boat

    Our High purity quartz boat is made of fused quartz (SiO₂ content ≥ 99.99%). With its excellent resistance to extreme environments, low thermal expansion coefficient, and long life cycle, it has become an irreplaceable key consumable in the semiconductor and new energy industries.

  • Why does SiC coated Graphite Susceptor fail? - VeTek Semiconductor

    During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • Can Silicon Carbide Ceramics Withstand Extreme Industrial Environments

    At VeTek Semiconductor, we've specialized in pushing the boundaries of what's possible with advanced Silicon Carbide Ceramics, developing grades specifically engineered to thrive where other materials falter.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • Why is CO₂ Introduced During the Wafer Dicing Process?

    Introducing CO₂ into the dicing water during wafer cutting is an effective process measure to suppress static charge buildup and lower contamination risk, thereby improving dicing yield and long-term chip reliability.

  • Three SiC single crystal growth technologies

    The main methods for growing SiC single crystals are: physical vapor transport (PVT), high temperature chemical vapor deposition (HTCVD) and high temperature solution growth (HTSG).

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