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CVD SiC Coating Protector
  • CVD SiC Coating ProtectorCVD SiC Coating Protector

CVD SiC Coating Protector

Vetek Semiconductor's CVD SiC Coating Protector used is LPE SiC epitaxy, The term "LPE" usually refers to Low Pressure Epitaxy (LPE) in Low Pressure Chemical Vapor Deposition (LPCVD). In semiconductor manufacturing, LPE is an important process technology for growing single crystal thin films, often used to grow silicon epitaxial layers or other semiconductor epitaxial layers.Pls no hesitate to contact us for more questions.


Product positioning and core functions:

CVD SiC Coating Protector is a key component in LPE silicon carbide epitaxial equipment, mainly used to protect the internal structure of the reaction chamber and improve process stability. Its core functions include:


Corrosion protection: The silicon carbide coating formed by the chemical vapor deposition (CVD) process can resist the chemical corrosion of chlorine/fluorine plasma and is suitable for harsh environments such as etching equipment;

Thermal management: The high thermal conductivity of silicon carbide material can optimize the temperature uniformity in the reaction chamber and improve the quality of the epitaxial layer;

Reducing pollution: As a lining component, it can prevent the reaction by-products from directly contacting the chamber and extend the equipment maintenance cycle.


Technical characteristics and design:


Structural design:

Usually divided into upper and lower half-moon parts, symmetrically installed around the tray to form a ring-shaped protective structure;

Cooperating with components such as trays and gas shower heads to optimize airflow distribution and plasma focusing effects.

Coating process:

The CVD method is used to deposit high-purity SiC coatings, with a uniformity of film thickness within ±5% and a surface roughness as low as Ra≤0.5μm;

The typical coating thickness is 100-300μm, and it can withstand a high temperature environment of 1600℃.


Application scenarios and performance advantages:


Applicable equipment:

Mainly used for LPE's 6-inch 8-inch silicon carbide epitaxial furnace, supporting SiC homoepitaxial growth;

Suitable for etching equipment, MOCVD equipment and other scenarios that require high corrosion resistance.

Key indicators:

Thermal expansion coefficient: 4.5×10⁻⁶/K (matching with graphite substrate to reduce thermal stress);

Resistivity: 0.1-10Ω·cm (meeting conductivity requirements);

Service life: 3-5 times longer than traditional quartz/silicon materials.


Technical barriers and challenges


This product needs to overcome process difficulties such as coating uniformity control (such as edge thickness compensation) and substrate-coating interface bonding optimization (≥30MPa), and at the same time needs to match the high-speed rotation (1000rpm) and temperature gradient requirements of the LPE equipment.





Basic physical properties of CVD SiC coating:

CVD SIC COATING FILM CRYSTAL STRUCTURE

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain Size 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young's Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1


Production shops:

VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry chain:

Overview of the semiconductor chip epitaxy industry chain


Hot Tags: CVD SiC Coating Protector
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