VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality GaN Epitaxial Graphite susceptor For G5. we have established long-term and stable partnerships with numerous well-known companies at home and abroad, earning the trust and respect of our customers.
VeTek Semiconductor is a professional China GaN Epitaxial Graphite susceptor For G5 manufacturer and supplier. The GaN Epitaxial Graphite susceptor For G5 is a critical component used in the Aixtron G5 metal-organic chemical vapor deposition (MOCVD) system for the growth of high-quality gallium nitride (GaN) thin films,it plays a crucial role in ensuring uniform temperature distribution, efficient heat transfer, and minimal contamination during the growth process.
Key Features of VeTek Semiconductor GaN Epitaxial Graphite susceptor For G5:
-High purity: The susceptor is made from highly pure graphite with CVD coating, minimizing contamination of the growing GaN films.
-Excellent thermal conductivity: Graphite's high thermal conductivity (150-300 W/(m·K)) ensures uniform temperature distribution across the susceptor, leading to consistent GaN film growth.
-Low thermal expansion: The susceptor's low thermal expansion coefficient minimizes thermal stress and cracking during the high-temperature growth process.
-Chemical inertness: Graphite is chemically inert and does not react with the GaN precursors, preventing unwanted impurities in the grown films.
-Compatibility with Aixtron G5: The susceptor is specifically designed for use in the Aixtron G5 MOCVD system, ensuring proper fit and functionality.
Applications:
High-brightness LEDs: GaN-based LEDs offer high efficiency and long lifespan, making them ideal for general lighting, automotive lighting, and display applications.
High-power transistors: GaN transistors offer superior performance in terms of power density, efficiency, and switching speed, making them suitable for power electronics applications.
Laser diodes: GaN-based laser diodes offer high efficiency and short wavelengths, making them ideal for optical storage and communication applications.
Product parameter of the GaN Epitaxial Graphite Susceptor for G5
Physical properties of isostatic graphite
Property
Unit
Typical Value
Bulk Density
g/cm³
1.83
Hardness
HSD
58
Electrical Resistivity
μΩ.m
10
Flexural Strength
MPa
47
Compressive Strength
MPa
103
Tensile Strength
MPa
31
Young's Modulus
GPa
11.8
Thermal Expansion(CTE)
10-6K-1
4.6
Thermal Conductivity
W·m-1·K-1
130
Average Grain Size
μm
8-10
Porosity
%
10
Ash Content
ppm
≤10 (after purified)
Note: Before coating, we will do first purification, after coating, will do second purification.
For inquiries about Silicon Carbide Coating, Tantalum Carbide Coating, Special Graphite or price list, please leave your email to us and we will be in touch within 24 hours.
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