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China MOCVD Epitaxy Manufacturer, Supplier, Factory

No matter new customer or old customer, We believe in long term and trusted relationship for MOCVD Epitaxy, Inlet Rings, MOCVD Inlet Seal Ring, Sapphire Substrate for LED, LED Epitaxy, Prospects first! Whatever you require, we should do our utmost to help you. We warmly welcome clients from all around the globe to cooperate with us for mutual enhancement.
MOCVD Epitaxy, Our company is working by the operation principle of "integrity-based, cooperation created, people oriented, win-win cooperation". We hope we can have a friendly relationship with businessman from all over the world.

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  • 8-Inch CVD Silicon Carbide (SiC) Coated Epitaxy Top Ring

    8-Inch CVD Silicon Carbide (SiC) Coated Epitaxy Top Ring

    The 8-inch SiC epi top ring is a hardware part for semiconductor reactors. It works inside Si/SiC epitaxy and MOCVD/CVD systems. This ring stabilizes the heat inside the chamber. It also controls the flow of gases. The material is high-purity CVD Silicon Carbide. It does not have the outgassing issues of graphite. It also reduces particle contamination during production.We welcome your inquiries.
  • Plasma Etching Focus Ring

    Plasma Etching Focus Ring

    An important component used in the wafer fabrication etching process is the plasma etching focus ring, whose function is to hold the wafer in place to maintain plasma density and prevent contamination of the wafer sides.Vetek semiconductor provide plasma etching focus ring with different material like monocrystalline silicon, silicon carbide, boron carbide and other ceramic materials.
  • Quartz bell jar

    Quartz bell jar

    Vetek Semiconductor is a professional Semiconductor Quartz Bell Jar manufacturer and supplier in China. Our Semiconductor Quartz Bell Jar is widely used in key components of semiconductor manufacturing equipment, especially in CVD, diffusion, oxidation and PVD processes. Vetek Semiconductor is committed to providing advanced Semiconductor Quartz Bell Jar products and technical solutions for the semiconductor industry. Welcome your further inquiries.
  • Silicon carbide Cantilever Paddle for Wafer Processing

    Silicon carbide Cantilever Paddle for Wafer Processing

    The Silicon Carbide Cantilever Paddle from Veteksemicon is engineered for advanced wafer processing in semiconductor manufacturing. Made of high-purity SiC, it delivers outstanding thermal stability, superior mechanical strength, and excellent resistance to high temperatures and corrosive environments. These features ensure precise wafer handling, extended service life, and reliable performance in processes such as MOCVD, epitaxy, and diffusion. Welcome to consult.
  • Quartz Wafer Boats

    Quartz Wafer Boats

    Our Quartz Wafer Boats are high-purity wafer carrier solution tailored for semiconductor, LED, solar cell, and battery manufacturing processes. Engineered to endure high temperatures and chemically aggressive environments, this quartz boat features low thermal expansion, excellent electrical insulation, and long-term dimensional stability. Ideal for diffusion, oxidation, and LPCVD processes, it supports precise wafer alignment and is available in various sizes to meet different equipment requirements.
  • Semiconductor Ceramic Nozzle

    Semiconductor Ceramic Nozzle

    Semiconductor ceramic nozzle from VeTeK Semiconductor are carefully manufactured with excellent uniformity and precision. As a professional Semiconductor ceramic nozzle manufacturer and supplier, VeTeKSemi is always committed to providing the highest quality Ceramic Nozzle products at competitive prices. Welcome your further consultation.
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  • Reviews

  • CVD Coatings in Semiconductor Epitaxy: Engineering Parameters, SiC/TaC Selection and Failure Control

    Technical white paper on how CVD SiC and TaC coatings influence thermal stability, contamination, particles and repeatability in semiconductor epitaxy, with parameter tables, a coating-selection decision tree, failure mechanisms and RFQ criteria.

  • Why Is Porous Tantalum Carbide (TaC) Coated Graphite Ring Critical for Reliable SiC Crystal Growth

    The Porous Tantalum Carbide (TaC) Coated Graphite Ring is a specialized thermal-field component designed for Physical Vapor Transport (PVT) SiC single-crystal growth. By combining high-purity porous graphite with a dense CVD tantalum carbide coating, it provides high-temperature stability, corrosion protection, controlled heat distribution, and low contamination. This article explains its structure, technical advantages, applications, specifications, and selection considerations for semiconductor and SiC crystal-growth equipment.

  • Welcome customers to visit Veteksemicon's SiC Coating/ TaC Coating and Epitaxy Process Factory

    On September 5, VeTek Semiconductor's customers visited the SiC Coating and TaC Coating factories and reached further agreements on the latest Epitaxial Process solutions.

  • Why does SiC coated Graphite Susceptor fail? - VeTek Semiconductor

    During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

  • What is Tantalum Carbide TaC Coating? - Veteksemicon

    This article introduces the product characteristics of TaC coating, the specific process of preparing TaC coating products using CVD technology, introduces Veteksemicon's most popular TaC coating, and briefly analyzes the reasons for choosing Veteksemicon.

  • Why Silicon carbide(SiC) PVT Crystal Growth Cannot Do Without Tantalum Carbide Coatings(TaC)?

    In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.

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