SiC Coated Wafer Carrier for Etching

Core Application of SiC Coated Wafer Carrier for Etching Process

1. GaN Film Growth and Etching in LED Manufacturing

SiC coated carriers (such as PSS Etching Carrier) are used to support sapphire substrates (Patterned Sapphire Substrate, PSS) in LED production and perform chemical vapor deposition (MOCVD) of gallium nitride (GaN) films at high temperatures. The carrier is then removed by a wet etching process to form a surface microstructure to improve light extraction efficiency.

Key role: The wafer carrier needs to withstand temperatures up to 1600°C and chemical corrosion in the plasma etching environment. The high purity (99.99995%) and density of the SiC coating prevent metal contamination and ensure the uniformity of the GaN film.

2. Semiconductor plasma/dry etching process

In ICP (inductively coupled plasma) etching, SiC coated carriers achieve uniform heat distribution through optimized airflow design (such as laminar flow mode), avoid impurity diffusion, and improve etching accuracy. For example, Veteksemicon's SiC Coated ICP Etching Carrier can withstand a sublimation temperature of 2700°C and is suitable for high-energy plasma environments.

3. Solar cell and power device manufacturing

SiC carriers perform well in high-temperature diffusion and etching of silicon wafers in the photovoltaic field. Their low thermal expansion coefficient (4.5×10⁻⁶/K) reduces deformation caused by thermal stress and extends service life.

Physical properties and advantages of SiC Coated Wafer Carrier for Etching

1. Tolerance to extreme environments:

High temperature stability: CVD SiC coating can work in 1600°C air or 2200°C vacuum environment for a long time, which is much higher than traditional quartz or graphite carriers.

Corrosion resistance: SiC has excellent resistance to acids, alkalis, salts and organic solvents, and is suitable for semiconductor production lines with frequent chemical cleaning.

2. Thermal and mechanical properties:

High thermal conductivity (300 W/mK): Rapid heat dissipation reduces thermal gradients, ensures wafer temperature uniformity, and avoids film thickness deviation.

High mechanical strength: flexural strength reaches 415 MPa (room temperature), and it still maintains more than 90% strength at high temperature, avoiding carrier cracking or delamination.

Surface finish: SSiC (pressure sintered silicon carbide) has low surface roughness (<0.1μm), reducing particle contamination and improving wafer yield.

3. Material matching optimization:

Low thermal expansion difference between graphite substrate and SiC coating: By adjusting the coating process (such as gradient deposition), the interface stress is reduced and the coating is prevented from peeling.

High purity and low defects: The CVD process ensures the coating purity >99.9999%, avoiding metal ion contamination of sensitive processes (such as SiC power device manufacturing).

Basic physical properties of CVD SiC coating

CVD SIC COATING FILM CRYSTAL STRUCTURE

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