Products

Silicon Carbide Coating

VeTek Semiconductor specializes in the production of ultra pure Silicon Carbide Coating products, these coatings are designed to be applied to purified graphite, ceramics, and refractory metal components.

Our high purity coatings are primarily targeted for use in the semiconductor and electronics industries. They serve as a protective layer for wafer carriers, susceptors, and heating elements, safeguarding them from corrosive and reactive environments encountered in processes such as MOCVD and EPI. These processes are integral to wafer processing and device manufacturing. Additionally, our coatings are well-suited for applications in vacuum furnaces and sample heating, where high vacuum, reactive, and oxygen environments are encountered.

At VeTek Semiconductor, we offer a comprehensive solution with our advanced machine shop capabilities. This enables us to manufacture the base components using graphite, ceramics, or refractory metals and apply the SiC or TaC ceramic coatings in-house. We also provide coating services for customer-supplied parts, ensuring flexibility to meet diverse needs.

Our Silicon Carbide Coating products are widely used in Si epitaxy, SiC epitaxy, MOCVD system, RTP/RTA process, etching process, ICP/PSS etching process, process of various LED types, including blue and green LED, UV LED and deep-UV LED etc.,which is adapted to equipment from LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI and so on.


Reactor parts we can do:

Aixtron G5 MOCVD Susceptors


Key Features

● Ultra-high purity (99.99995%) with dense β-phase polycrystalline structure for minimal particle generation.

● Excellent chemical resistance to HCl, NH₃, H₂, SiH₄ and other corrosive process gases.

● High thermal conductivity (~300 W·m⁻¹·K⁻¹) and thermal stability up to sublimation temperature of 2700°C.

● Superior hardness (2500 Vickers) and strong adhesion to graphite, ceramics and refractory metals.

● Conformal coating coverage suitable for complex geometries including susceptors, carriers, shower heads and heating elements.

● Compatible with major equipment platforms: LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI and more.


Silicon Carbide Coating several unique advantages

Silicon Carbide Coating several unique advantages



Product Specifications

VeTek Semiconductor Silicon Carbide Coating Parameter

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density 3.21 g/cm³
SiC coating Hardness 2500 Vickers hardness(500g load)
Grain Size 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg⁻¹·K⁻¹
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young's Modulus 430 GPa 4pt bend, 1300℃
Thermal Conductivity 300 W·m⁻¹·K⁻¹
Thermal Expansion (CTE) 4.5×10⁻⁶ K⁻¹


CVD SIC FILM CRYSTAL STRUCTURE

CVD SIC FILM CRYSTAL STRUCTURE


Product Categories

Silicon Carbide coated Epi susceptor Silicon Carbide coated Epi susceptor SiC Coating Wafer Carrier SiC Coating Wafer Carrier SiC coated Satellite cover for MOCVD SiC coated Satellite cover for MOCVD CVD SiC Coating Wafer Epi Susceptor CVD SiC Coating Wafer Epi Susceptor CVD SiC coating Heating Element CVD SiC coating Heating Element Aixtron Satellite wafer carrier Aixtron Satellite wafer carrier SiC Coating Epi susceptor SiC Coating Epi susceptor SiC coating halfmoon graphite parts SiC coating halfmoon graphite parts


Applications

To meet the diverse needs of semiconductor processes, VeTek offers targeted Silicon Carbide Coating products. The following table classifies them by major application areas, listing typical components and applicable processes:

Application Field Typical Products Application Description
Si Epitaxy CVD SiC Coated Graphite Susceptor, SiC Coating Wafer Carrier, Epi susceptor Suitable for silicon epitaxial processes, providing uniform temperature distribution, chemical resistance and low particle generation for high-quality epi layers.
SiC Epitaxy CVD SiC Coated Planetary Susceptor, SiC coated wafer susceptor, guide ring For high-temperature SiC epitaxial growth (LPE etc.), delivering thermal stability and clean interface to ensure film uniformity and process yield.
GaN / LED Epitaxy (MOCVD) SiC coated Satellite cover, Shower Head, satellite disk, masking ring Compatible with Aixtron, Veeco MOCVD systems; resists H₂/NH₃ corrosion, reduces particle contamination and improves LED epi yield (blue, green, UV, deep-UV).
RTP / RTA Process CVD SiC Coated RTP Susceptor, RTP RTA Carrier, heating elements Designed for rapid thermal processing and annealing; withstands repeated high-temperature cycling with excellent thermal conductivity and dimensional stability.
Etching / ICP / PSS Solid SiC Focus Rings, SiC coated components for etch chambers High hardness and plasma resistance protect chamber parts, ensure etch profile uniformity and extend service life in halogen-rich environments.
High-Temp Heating & Support CVD SiC coating Heating Element, wafer carriers, susceptors For induction/resistive heating and vacuum furnace applications; offers high hardness, thermal shock resistance and long component lifespan.

For more detailed process matching solutions, please refer to the Silicon Epitaxy and Silicon Carbide Epitaxy related application pages.


As a professional Silicon Carbide Coating manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Silicon Carbide Coating made in China, you can leave us a message.

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Aixtron G10 Solid SiC planetary reactor components

Aixtron G10 Solid SiC planetary reactor components

VeTek Semiconductor’s Solid SiC accessories for the Aixtron G10-SiC platform are high-purity, fully dense silicon carbide components designed for the demanding thermal and chemical environment of SiC epitaxial growth. These parts deliver outstanding high-temperature stability, chemical resistance, and ultra-low particle generation, supporting the high-throughput 9×150 mm / 6×200 mm planetary reactor configuration used in power device manufacturing.
CVD SiC Coated Graphite Susceptor for Wafer Carrier

CVD SiC Coated Graphite Susceptor for Wafer Carrier

VETEK CVD SiC Coated Graphite Susceptor for Wafer Carrier is a high-performance wafer support component designed for semiconductor epitaxy processes. The product uses high-purity graphite as the substrate and is coated with a uniform CVD silicon carbide (SiC) layer, providing excellent thermal stability, chemical resistance, and particle control. As a critical graphite susceptor component, it directly supports wafers inside the reaction chamber and helps maintain uniform temperature distribution and stable epitaxial growth conditions.
CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier

The VETEK CVD Silicon Carbide (SiC) Coated Graphite RTP RTA Carrier is designed for rapid thermal processing (RTP) and rapid thermal annealing (RTA) systems used in semiconductor manufacturing. Manufactured from high-purity isostatic graphite with a dense CVD SiC coating, it provides outstanding thermal stability, excellent temperature uniformity, superior chemical resistance, and ultra-low particle generation. Engineered to withstand repeated rapid heating and cooling cycles, the carrier ensures reliable wafer support and stable process performance for silicon wafer annealing and other high-temperature semiconductor applications.
CVD Silicon Carbide(SiC) Coated RTP Susceptor

CVD Silicon Carbide(SiC) Coated RTP Susceptor

The CVD SiC coated RTP susceptor from VeTek Semiconductor serves rapid thermal processing (RTP) and rapid thermal annealing (RTA) equipment used throughout semiconductor manufacturing. The substrate is machined from high‑purity isostatic graphite, over which a dense CVD silicon carbide (SiC) layer is deposited. This construction yields high thermal conductivity, robust chemical inertness, and sustained dimensional stability under repeated high‑temperature cycling.
CVD Silicon Carbide(SiC) Coated Graphite Shower Head

CVD Silicon Carbide(SiC) Coated Graphite Shower Head

If you’ve ever dealt with uneven gas flow or particle contamination in a deposition chamber, the VETEK CVD SiC Coated Graphite Shower Head is designed to solve that. It starts with high‑purity isostatic graphite for thermal stability and easy machining, then gets a dense CVD Silicon Carbide (SiC) coating that seals the surface, resists corrosive gases (like HCl or NF₃), and prevents outgassing. The result is a gas distribution plate that delivers uniform flow across the wafer, handles high‑temperature epitaxy, and lasts far longer than bare graphite or quartz – making it a trusted component for CVD, PECVD, MOCVD, silicon epitaxy, and SiC epitaxy processes. We also offer custom hole patterns and sizes, because no two reactors are exactly the same.
Solid SiC Focus Rings

Solid SiC Focus Rings

Designed to surround the wafer tracking zone, the Solid SiC Focus Ring ensures linear plasma distribution and exact edge-to-center etch profiles.These premium β-SiC components are built by Vetek Semiconductor (Wuyi Tianyao New Material Technology Co., LTD) using proprietary Chemical Vapor Deposition (CVD) technology. By vaporizing raw materials into a dense, binderless matrix, Vetek eliminates the porous micro-gaps common in older materials. Compared to standard quartz or silicon shielding, our CVD SiC components stand up far better to corrosive halogen gases, shielding the wafer in deep sub-7nm logic and dense memory chip manufacturing.Looking forward to your further inquiry.
As a professional Silicon Carbide Coating manufacturer and supplier in China, we have our own factory. Whether you need customized services to meet the specific needs of your region or want to buy advanced and durable Silicon Carbide Coating made in China, you can leave us a message.
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