Silicon Carbide Coating

VeTek Semiconductor specializes in the production of ultra pure Silicon Carbide Coating products, these coatings are designed to be applied to purified graphite, ceramics, and refractory metal components.

Our high purity coatings are primarily targeted for use in the semiconductor and electronics industries. They serve as a protective layer for wafer carriers, susceptors, and heating elements, safeguarding them from corrosive and reactive environments encountered in processes such as MOCVD and EPI. These processes are integral to wafer processing and device manufacturing. Additionally, our coatings are well-suited for applications in vacuum furnaces and sample heating, where high vacuum, reactive, and oxygen environments are encountered.

At VeTek Semiconductor, we offer a comprehensive solution with our advanced machine shop capabilities. This enables us to manufacture the base components using graphite, ceramics, or refractory metals and apply the SiC or TaC ceramic coatings in-house. We also provide coating services for customer-supplied parts, ensuring flexibility to meet diverse needs.

Our Silicon Carbide Coating products are widely used in Si epitaxy, SiC epitaxy, MOCVD system, RTP/RTA process, etching process, ICP/PSS etching process, process of various LED types, including blue and green LED, UV LED and deep-UV LED etc.,which is adapted to equipment from LPE, Aixtron, Veeco, Nuflare, TEL, ASM, Annealsys, TSI and so on.

Reactor parts we can do:

Silicon Carbide Coating several unique advantages:

Silicon Carbide Coating several unique advantages

VeTek Semiconductor Silicon Carbide Coating Parameter

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
SiC coating Density	3.21 g/cm³
SiC coatingHardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg^-1·K^-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m^-1·K^-1
Thermal Expansion(CTE)	4.5×10-6K^-1

CVD SIC FILM CRYSTAL STRUCTURE

Silicon Carbide coated Epi susceptor SiC Coating Wafer Carrier SiC coated Satellite cover for MOCVD CVD SiC Coating Wafer Epi Susceptor CVD SiC coating Heating Element Aixtron Satellite wafer carrier SiC Coating Epi susceptor SiC coating halfmoon graphite parts

Solid SiC Focus Rings

Designed to surround the wafer tracking zone, the Solid SiC Focus Ring ensures linear plasma distribution and exact edge-to-center etch profiles.These premium β-SiC components are built by Vetek Semiconductor (Wuyi Tianyao New Material Technology Co., LTD) using proprietary Chemical Vapor Deposition (CVD) technology. By vaporizing raw materials into a dense, binderless matrix, Vetek eliminates the porous micro-gaps common in older materials. Compared to standard quartz or silicon shielding, our CVD SiC components stand up far better to corrosive halogen gases, shielding the wafer in deep sub-7nm logic and dense memory chip manufacturing.Looking forward to your further inquiry.

AMAT 0200-03201 CVD SiC Wafer Lift Pin

This AMAT 0200-03201 Wafer Lift Pin from VeTek starts with high-purity graphite, then we add a dense CVD SiC coating on top. It’s made for 300mm epitaxy systems and Applied Materials EPI reactors. Why graphite and SiC? Graphite handles heat really well. The SiC layer takes on corrosive gases and doesn’t wear out fast. The thin wall design? That’s for cleaner wafer lifting and positioning, fewer particles, and longer part life under high temperatures. We also make similar SiC coated graphite parts for ASM, Aixtron, and LPE systems. Looking forward to your inquiry.

Wafer Carrier for VEECO MOCVD (LED Epitaxy)

Vetek Semiconductor makes wafer carriers for VEECO MOCVD systems, built specifically for LED epitaxy work like GaN LEDs, blue-green LEDs, and deep UV LED growth. These carriers start with high-purity graphite and get a dense CVD silicon carbide (SiC) coating. That combination holds up well under the high temperatures you see in MOCVD – good thermal stability, corrosion resistance, and the coating lasts.

Halfmoon for LPE Reaction Chamber

The Halfmoon is a graphite component used inside LPE SiC reactors, mainly installed around the chamber hot zone. Although it does not directly contact the wafer, it still plays a role in gas flow stability and reactor operation during epitaxial growth.To handle high temperature and reactive process conditions, the component is usually protected with CVD SiC coating, while TaC coating is also available for some applications. VETEK also supplies graphite felt insulation and other coated graphite parts for SiC epitaxy systems.

8-Inch CVD Silicon Carbide (SiC) Coated Epitaxy Top Ring

The 8-inch SiC epi top ring is a hardware part for semiconductor reactors. It works inside Si/SiC epitaxy and MOCVD/CVD systems. This ring stabilizes the heat inside the chamber. It also controls the flow of gases. The material is high-purity CVD Silicon Carbide. It does not have the outgassing issues of graphite. It also reduces particle contamination during production.We welcome your inquiries.

MOCVD SiC Coated Susceptor

VETEK MOCVD SiC Coated Susceptor is a precision-engineered carrier solution specifically developed for LED and compound semiconductor epitaxial growth. It demonstrates exceptional thermal uniformity and chemical inertness within complex MOCVD environments. Leveraging VETEK’s rigorous CVD deposition process, we are committed to enhancing wafer growth consistency and extending the service life of core components, providing stable and reliable performance assurance for every batch of your semiconductor production.

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+86-15988690905
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+86-579-87223657
E-mail
anny@veteksemi.com
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Wangda Road, Ziyang Street, Wuyi County, Jinhua City, Zhejiang Province, China

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