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EPI Susceptor Parts
  • EPI Susceptor PartsEPI Susceptor Parts

EPI Susceptor Parts

In the core process of silicon carbide epitaxial growth, Veteksemicon understands that susceptor performance directly determines the quality and production efficiency of the epitaxial layer. Our high-purity EPI susceptors, designed specifically for the SiC field, utilize a special graphite substrate and a dense CVD SiC coating. With their superior thermal stability, excellent corrosion resistance, and extremely low particle generation rate, they ensure unparalleled thickness and doping uniformity for customers even in harsh high-temperature process environments. Choosing Veteksemicon means choosing the cornerstone of reliability and performance for your advanced semiconductor manufacturing processes.

General product information


Place of Origin:
China
Brand Name:
Veteksemicon
Model Number:
EPI Susceptor Part-01
Certification:
ISO9001


Product business terms


Minimum Order Quantity:
Subject to negotiation
Price:
Contact for Customized Quotation
Packaging Details:
Standard export package
Delivery Time:
Delivery Time: 30-45 Days After Order Confirmation
Payment Terms:
T/T
Supply Ability:
100units/Month


Application: In the pursuit of ultimate performance and yield in SiC epitaxial processes, Veteksemicon EPI Susceptor provides excellent thermal stability and uniformity, becoming a key support for improving the performance of power and RF devices and reducing overall costs.

Services that can be provided: customer application scenario analysis, matching materials, technical problem solving. 

Company profile:Veteksemicon has 2 laboratories, a team of experts with 20 years of material experience, with R&D and production, testing and verification capabilities.


Technical Parameters

project
parameter
Base material
High-purity isostatic graphite
Coating material
High-purity CVD SiC
Coating thickness
Customization is available to meet customer process requirements (typical value: 100±20μm).
Purity
> 99.9995% (SiC coating)
Maximum operating temperature
> 1650°C
Coefficient of thermal expansion
Good match with SiC wafers
Surface roughness
Ra < 1.0 μm (adjustable upon request)


Veteksemicon EPI Susceptor Part core advantages


1. Ensure ultimate uniformity

In silicon carbide epitaxial processes, even micron-level thickness fluctuations and doping inhomogeneities directly impact the performance and yield of the final device. Veteksemicon EPI Susceptor achieves optimal thermal field distribution within the reaction chamber through precise thermodynamic simulation and structural design. Our selection of a high thermal conductivity substrate, combined with a unique surface treatment process, ensures that temperature differences at any point on the wafer's surface are controlled within an extremely small range even under high-speed rotation and high-temperature environments. The direct value this brings is a highly reproducible, batch-to-batch epitaxial layer with excellent uniformity, laying a solid foundation for manufacturing high-performance, highly consistent power chips.


2. Resisting the challenge of high temperatures

SiC epitaxial processes typically require prolonged operation at temperatures exceeding 1500°C, posing a severe challenge to any material. Veteksemicon Susceptor utilizes specially treated isostatically pressed graphite, whose high-temperature flexural strength and creep resistance far surpass those of ordinary graphite. Even after hundreds of hours of continuous high-temperature thermal cycling, our product maintains its initial geometry and mechanical strength, effectively preventing wafer warpage, slippage, or process cavity contamination risks caused by tray deformation, fundamentally ensuring the continuity and safety of production activities.


3. Maximize process stability

Production interruptions and unplanned maintenance are major cost killers in wafer manufacturing. Veteksemicon considers process stability a core metric for Susceptor. Our patented CVD SiC coating is dense, non-porous, and has a mirror-like smooth surface. This not only significantly reduces particle shedding under high-temperature airflow but also significantly slows the adhesion of reaction byproducts (such as polycrystalline SiC) to the tray surface. This means your reaction chamber can remain clean for longer periods, extending the intervals between regular cleaning and maintenance, thereby improving overall equipment utilization and throughput.


4. Extend service life

As a consumable component, the replacement frequency of susceptors directly impacts production operating costs. Veteksemicon extends product lifespan through a dual technological approach: "substrate optimization" and "coating enhancement." A high-density, low-porosity graphite substrate effectively slows down the penetration and corrosion of the substrate by process gases; simultaneously, our thick and uniform SiC coating acts as a robust barrier, significantly suppressing sublimation at high temperatures. Real-world testing shows that, under the same process conditions, Veteksemicon susceptors exhibit a slower performance degradation rate and a longer effective service life, resulting in lower per-wafer operating costs.



5. Ecological chain verification endorsement

Veteksemicon EPI Susceptor Part' ecological chain verification covers raw materials to production, has passed international standard certification, and has a number of patented technologies to ensure its reliability and sustainability in the semiconductor and new energy fields.


For detailed technical specifications, white papers, or sample testing arrangements, please contact our Technical Support Team to explore how Veteksemicon can enhance your process efficiency.


Main application fields


Application direction
Typical scenario
Power Electronics
Power devices such as SiC MOSFETs and Schottky diodes used in the manufacture of electric vehicles and industrial motor drives.
Radio frequency communication
Epitaxial layers for growing GaN-on-SiC radio frequency power amplifier devices (RF HEMTs) for 5G base stations and radar.
Cutting-edge research and development
It serves the process development and verification of next-generation wide-bandgap semiconductor materials and device structures.


Veteksemicon products warehouse


Veteksemicon products shop


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