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SiC Coated Barrel Susceptor for LPE PE2061S
  • SiC Coated Barrel Susceptor for LPE PE2061SSiC Coated Barrel Susceptor for LPE PE2061S

SiC Coated Barrel Susceptor for LPE PE2061S

As one of the leading wafer susceptor manufacturing plants in China, VeTek Semiconductor has made continuous progress in wafer susceptor products and has become the first choice for many epitaxial wafer manufacturers. The SiC Coated Barrel Susceptor for LPE PE2061S provided by VeTek Semiconductor is designed for LPE PE2061S 4'' wafers. The susceptor has a durable silicon carbide coating that improves performance and durability during the LPE (liquid phase epitaxy) process. Welcome your inquiry, we look forward to becoming your long-term partner.


VeTek Semiconductor is a professional China SiC Coated Barrel Susceptor for LPE PE2061S manufacturer and supplier.

The VeTeK Semiconductor SiC-coated barrel susceptor for LPE PE2061S is a high-performance product created by applying a fine layer of silicon carbide onto the surface of highly purified isotropic graphite. This is achieved through VeTeK Semiconductor's proprietary Chemical Vapor Deposition (CVD) process.

Our SiC Coated Barrel Susceptor for LPE PE2061S is a kind of CVD epitaxial deposition barrel reactor is designed to deliver reliable performance in extreme environments. Its exceptional coating adhesion, high-temperature oxidation resistance, and corrosion resistance make it an excellent choice for use in harsh conditions. Additionally, its uniform thermal profile and laminar gas flow pattern prevent contamination, ensuring high-quality epitaxial growth.

The barrel-shaped design of our semiconductor epitaxial reactor optimizes laminar gas flow patterns, ensuring uniform heat distribution. This helps prevent any contamination or diffusion of impurities, ensuring high-quality epitaxial growth on wafer substrates.

We are dedicated to providing our customers with high-quality, cost-effective products. Our CVD SiC coated Barrel Susceptor offers the advantage of price competitiveness while maintaining excellent density for both the graphite substrate and silicon carbide coating, providing reliable protection in high-temperature and corrosive working environments.


SEM DATA OF CVD SIC FILM CRYSTAL STRUCTURE:

CVD SIC FILM CRYSTAL STRUCTURE


The SiC-coated barrel susceptor for single crystal growth exhibits a very high surface smoothness.

It minimizes the difference in thermal expansion coefficient between the graphite substrate and

silicon carbide coating, effectively improving bonding strength and preventing cracking and delamination.

Both the graphite substrate and silicon carbide coating have high thermal conductivity and excellent thermal distribution capabilities.

It has a high melting point, high-temperature oxidation resistance, and corrosion resistance.



Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain Size 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young's Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1


VeTek Semiconductor SiC Coated Barrel Susceptor for LPE PE2061S Production Shop:

SiC Coated Barrel Susceptor for LPE PE2061S Production Shop


Overview of the semiconductor chip epitaxy industry chain:

semiconductor chip epitaxy industry chain


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