China Silicon Epitaxy Manufacturer, Supplier, Factory

In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.

This blog discusses the specific applications of artificial intelligence in the field of CVD from two aspects: The Significance and Challenges of Chemical Vapor Deposition (CVD) Technology in Physics and CVD Technology and Machine Learning.

This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

Quartz products are widely used in the semiconductor manufacturing process due to their high purity, high-temperature resistance, and strong chemical stability.

Glassy carbon is a non-graphitized carbon that combines the properties of glass and ceramics. It has many properties such as high temperature resistance, corrosion resistance, good electrical conductivity, etc. This blog analyzes the research history and future development trend of glassy carbon, which is worth reading.

In the world of wide-bandgap (WBG) semiconductors, if the advanced manufacturing process is the "soul," the graphite susceptor is the "backbone," and its surface coating is the critical "skin."