SiC Coated Support for LPE PE2061S

VeTeK Semiconductor SiC Coated Support for LPE PE2061S in silicon epitaxy equipment, used in conjunction with a barrel type susceptor to support and hold the epitaxial wafers (or substrates) during the epitaxial growth process.

The bottom plate is mainly used with the barrel epitaxial furnace, the barrel epitaxial furnace has a larger reaction chamber and a higher production efficiency than the flat epitaxial susceptor. The support has a round hole design and is primarily used for exhaust outlet inside the reactor.

LPE PE2061S is a silicon carbide (SiC) coated graphite support base designed for semiconductor manufacturing and advanced material processing, suitable for high temperature, high precision process environments (such as liquid phase stripping technology LPE, metal-organic chemical vapor deposition MOCVD, etc.). Its core design combines the dual benefits of a high-purity graphite substrate with a dense SiC coating to ensure stability, corrosion resistance and thermal uniformity under extreme conditions.

Core characteristic

●  High temperature resistance:

The SiC coating can withstand high temperatures above 1200°C, and the thermal expansion coefficient is highly matched with the graphite substrate to avoid stress cracking caused by temperature fluctuations.

●  Excellent thermal uniformity:

The dense SiC coating, formed by chemical vapor deposition (CVD) technology, ensures uniform heat distribution on the surface of the base and improves the uniformity and purity of the epitaxial film.

●  Oxidation and corrosion resistance:

The SiC coating completely covers the graphite substrate, blocking oxygen and corrosive gases (such as NH₃, H₂, etc.), significantly extending the life of the base.

●  High mechanical strength:

The coating has high bonding strength with the graphite matrix, and can withstand multiple high-temperature and low-temperature cycles, reducing the risk of damage caused by thermal shock.

●  Ultra-high purity:

Meet the stringent impurity content requirements of semiconductor processes (metal impurity content ≤1ppm) to avoid contaminating wafers or epitaxial materials.

Technical process

●  Coating preparation: By chemical vapor deposition (CVD) or high temperature embedding method, uniform and dense β-SiC (3C-SiC) coating is formed on the surface of graphite with high bonding strength and chemical stability.

●  Precision machining: The base is finely machined by CNC machine tools, and the surface roughness is less than 0.4μm, which is suitable for high-precision wafer bearing requirements.

Application field

●  MOCVD equipment: For GaN, SiC and other compound semiconductor epitaxial growth, support and uniform heating substrate.

●  Silicon/sic epitaxy: Ensures high quality deposition of epitaxy layers in silicon or SIC semiconductor manufacturing.

●  Liquid phase stripping (LPE) process: ADAPTS ultrasonic auxiliary material stripping technology to provide a stable support platform for two-dimensional materials such as graphene and transition metal chalcogenides.

Competitive advantage

●  International standard quality: Performance benchmarking ToyoTanso, SGLCarbon and other international leading manufacturers, suitable for mainstream semiconductor equipment.

●  Customized service: Support disc shape, barrel shape and other base shape customization, to meet the design needs of different cavities.

●  Localization advantage: Shorten the supply cycle, provide rapid technical response, reduce supply chain risks.

Quality assurance

●  Rigorous testing: The density, thickness (typical value 100±20μm) and composition purity of the coating were verified by SEM, XRD and other analytical means.

●  Reliability test: Simulate the actual process environment for high temperature cycle (1000°C→ room temperature, ≥100 times) and corrosion resistance test to ensure long-term stability.

●  Applicable industries: semiconductor manufacturing, LED epitaxy, RF device production, etc.

SEM data and structure of CVD SIC films：