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China Epitaxial Plate Manufacturer, Supplier, Factory

We are commitment to offer you the aggressive price tag ,exceptional products and solutions high-quality, as well as fast delivery for Epitaxial Plate,CVD SiC Coated Wafer Baffles,Epitaxial Layer Growth,Single Crystal Growth,Silicon epitaxial, Top quality is factory' existence , Focus on customer' demand may be the source of enterprise survival and advancement, We adhere to honesty and good faith working attitude, seeking forward to the coming !
Epitaxial Plate, To create more creative products and solutions, maintain high-quality goods and update not only our products and solutions but ourselves so as to keep us ahead of the world, and the last but most vital one: to make every client satisfied with everything we present and to grow stronger together. To be the real winner, starts here!

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  • ALD Planetary Susceptor

    ALD Planetary Susceptor

    ALD process,means Atomic Layer Epitaxy process. Vetek Semiconductor and ALD system manufacturers have developed and produced SiC coated ALD Planetary Susceptors that meet the high requirements of the ALD process to evenly distribute the airflow over the substrate. At the same time, our high purity CVD SiC coating ensures purity in the process. Welcome to discuss cooperation with us.
  • TaC Coated Three-petal Ring

    TaC Coated Three-petal Ring

    VeTek Semiconductor is a leading TaC Coated Three-petal Ring manufacturer and innovator in China.We have been specialized in TaC and SiC coating for many years.Our products have a corrosion resistance, high strength. We look forward to becoming your long-term partner in China.Welcome to consult at any time.
  • CVD TaC Coating Ring

    CVD TaC Coating Ring

    In semiconductor industry, CVD TaC Coating Ring is a highly advantageous component designed to meet the demanding requirements of silicon carbide (SiC) crystal growth processes. Vetek semiconductor's CVD TaC Coating Ring provides outstanding high-temperature resistance and chemical inertness, making it an ideal choice for environments characterized by elevated temperatures and corrosive conditions.We are committed to creating efficient production of silicon carbide single crystal accessories. Pls feel free to contact us for more questions.
  • LPE SI EPI Susceptor Set

    LPE SI EPI Susceptor Set

    Flat susceptor and barrel susceptor are the main shape of epi susceptors.VeTek Semiconductor is a leading LPE Si Epi Susceptor Set manufacturer and innovator in China.We have been specialized in SiC coating and TaC coating for many years.We offer a LPE Si Epi Susceptor Set designed specifically for LPE PE2061S 4" wafers. The matching degree of graphite material and SiC coating is good, the uniformity is excellent, and the life is long, which can improve the yield of epitaxial layer growth during the LPE (Liquid Phase Epitaxy) process.We welcome you to visit our factory in China.
  • SiC Sealing Part

    SiC Sealing Part

    As an advanced SiC Sealing Part product manufacturer and factory in China. VeTek Semiconducto SiC Sealing Part is a high-performance sealing component widely used in semiconductor processing and other extreme high temperature and high pressure processes. Welcome your further consultation.
  • Wafer Chuck

    Wafer Chuck

    Wafer chunk a wafer clamping tool in semiconductor process and is widely used in PVD, CVD, ETCH and other process.Vetek Semiconductor's wafer chuck play pivotal roles in semiconductor production, enabling fast, high-quality output. With in-house manufacturing, competitive pricing, and robust R&D support, Vetek Semiconductor excels in OEM/ODM services for precision components.Looking forward to your inquiry.

  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

  • What is semiconductor epitaxy process?

    It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

  • Principles and Technology of Physical Vapor Deposition Coating (1/2) - VeTek Semiconductor

    Vacuum coating includes film material vaporization, vacuum transportation and thin film growth. According to the different film material vaporization methods and transportation processes, vacuum coating can be divided into two categories: PVD and CVD.

  • Semiconductor substrate wafer: Material properties of silicon, GaAs, SiC and GaN

    The article analyzes the material properties of semiconductor substrate wafers such as silicon, GaAs, SiC and GaN

  • Sanan Optoelectronics Co., Ltd.: 8-inch SiC chips are expected to be put into production in December!

    As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

  • What is an EPI Epitaxial Furnace? - VeTek Semiconductor

    The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

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