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China Epitaxial Plate Manufacturer, Supplier, Factory

We are commitment to offer you the aggressive price tag ,exceptional products and solutions high-quality, as well as fast delivery for Epitaxial Plate, CVD SiC Coated Wafer Baffles, Epitaxial Layer Growth, Single Crystal Growth, Silicon epitaxial, Top quality is factory' existence , Focus on customer' demand may be the source of enterprise survival and advancement, We adhere to honesty and good faith working attitude, seeking forward to the coming !
Epitaxial Plate, To create more creative products and solutions, maintain high-quality goods and update not only our products and solutions but ourselves so as to keep us ahead of the world, and the last but most vital one: to make every client satisfied with everything we present and to grow stronger together. To be the real winner, starts here!

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  • TaC Coating Heater

    TaC Coating Heater

    VeTek Semiconductor TaC Coating Heater has an extremely high melting point (about 3880°C). The high melting point enables it to operate at extremely high temperatures, especially in the growth of gallium nitride (GaN) epitaxial layers in the metal organic chemical vapor deposition (MOCVD) process. VeTek Semiconductor is committed to providing customers with customized product solutions. We look forward to hearing from you.
  • Hyperpure graphite rigid felt

    Hyperpure graphite rigid felt

    As a leading manufacturer and supplier of Hyperpure graphite rigid felt products in China, VeTek Semiconductor Hyperpure graphite rigid felt is a high-performance graphite felt product designed for high-temperature applications. It has excellent thermal insulation and compressive strength and is an indispensable material in the field of semiconductor high-temperature processing. Welcome to your further inquiries.
  • Porous SiC Ceramic Chuck

    Porous SiC Ceramic Chuck

    Vetek Semiconductor offers Porous SiC Ceramic Chuck widely used in wafer processing technology, transfer and other links, suitable for bonding, scribing, patch, polishing and other links, laser processing. Our Porous SiC Ceramic Chuck has Ultra-strong vacuum adsorption, high flatness and high purity meet the needs of most semiconductor industries.Welcome to inquiry us.
  • CVD SiC coating Epitaxy susceptor

    CVD SiC coating Epitaxy susceptor

    VeTek Semiconductor's CVD SiC Coating Epitaxy Susceptor is a precision-engineered tool designed for semiconductor wafer handling and processing. This SiC Coating Epitaxy Susceptor plays a vital role in promoting the growth of thin films, epilayers, and other coatings, and can precisely control temperature and material properties. Welcome your further inquiries.
  • CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor

    CVD TaC coating planetary SiC epitaxial susceptor is one of the core components of MOCVD planetary reactor. Through CVD TaC coating planetary SiC epitaxial susceptor, the large disk orbits and the small disk rotates, and the horizontal flow model is extended to multi-chip machines, so that it has both the high-quality epitaxial wavelength uniformity management and defect optimization of single-chip machines and the production cost advantages of multi-chip machines.VeTek Semiconductor can provide customers with highly customized CVD TaC coating planetary SiC epitaxial susceptor. If you also want to make a planetary MOCVD furnace like Aixtron, come to us!
  • Graphite Rotating Susceptor

    Graphite Rotating Susceptor

    High purity graphite rotating susceptor plays an important role in the epitaxial growth of gallium nitride (MOCVD process). VeTek Semiconductor is a leading graphite rotating susceptor manufacturer and supplier in China. We have developed many high-purity graphite products based on high-purity graphite materials, which fully meet the requirements of the semiconductor industry. VeTek Semiconductor looks forward to becoming your partner in Rotating Graphite susceptor.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • Semiconductor process: Chemical Vapor Deposition (CVD)

    Chemical vapor deposition (CVD) in semiconductor manufacturing is used to deposit thin film materials in the chamber, including SiO2, SiN, etc., and commonly used types include PECVD and LPCVD. By adjusting the temperature, pressure and reaction gas type, CVD achieves high purity, uniformity and good film coverage to meet different process requirements.

  • Why does 3C-SiC stand out among many SiC polymorphs? - VeTek Semiconductor

    Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

  • How does SiC coating improve the oxidation resistance of carbon felt？

    The article describes the excellent physical properties of Carbon felt, the specific reasons for choosing SiC coating, and the method and principle of SiC coating on carbon felt. It also specifically analyzes the use of D8 ADVANCE X-ray diffractometer (XRD) to analyze the phase composition of SiC coating carbon felt.

  • Why is SiC coating a key core material for SiC epitaxial growth?

    This article analyzes the reasons why SiC coating a key core material for SiC epitaxial growth and focuses on the specific advantages of SiC coating in the semiconductor industry.

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