CVD SiC Coated Graphite Susceptor for Wafer Carrier

1. Product Advantages

• High Purity Material: The semiconductor-grade graphite material and dense SiC coating structure minimize contamination risks and improve the reliability of the CVD SiC coated graphite susceptor.
• Excellent Thermal Uniformity: Optimized graphite structure and SiC coating provide stable heat transfer and uniform wafer temperature control.
• Superior Chemical Resistance: The dense SiC coating offers strong resistance against process gases and corrosive environments.
• Long Service Life: High hardness and wear resistance improve durability under high-temperature epitaxy conditions.
• Low Particle Generation: The dense CVD SiC surface reduces particle release and improves wafer process reliability.
• Customized Design Capability: Available in different sizes, structures, and configurations according to equipment requirements.

2. Technical Specifications

3. Applications

• SiC Epitaxy Process: The graphite susceptor is used as a wafer carrier in SiC epitaxy equipment, supporting SiC substrates during high-temperature epitaxial growth.
• Silicon Epitaxy Process: Applied in silicon epitaxial reactors for supporting wafers and maintaining stable thermal conditions.
• MOCVD Epitaxy: VETEK graphite susceptors are suitable for MOCVD, LED epitaxy, GaN epitaxy, silicon epitaxy, and other semiconductor manufacturing processes requiring excellent thermal uniformity and chemical stability..
• Semiconductor Manufacturing Equipment: Compatible with various epitaxy platforms, including LPE horizontal furnaces, Aixtron, NuFlare, and related semiconductor equipment.

4. Why Choose VETEK?

VETEK provides customized CVD SiC coated graphite susceptor solutions integrating graphite purification, precision machining, CVD coating, and inspection capabilities. Our semiconductor-grade graphite susceptor products feature high purity, uniform coating thickness, excellent thermal performance, and long service life for demanding wafer carrier applications.