Products
SiC Coated Top Plate for LPE PE2061S
  • SiC Coated Top Plate for LPE PE2061SSiC Coated Top Plate for LPE PE2061S
  • SiC Coated Top Plate for LPE PE2061SSiC Coated Top Plate for LPE PE2061S
  • SiC Coated Top Plate for LPE PE2061SSiC Coated Top Plate for LPE PE2061S

SiC Coated Top Plate for LPE PE2061S

VeTek Semiconductor has been deeply engaged in SiC coating products for many years and has become a leading manufacturer and supplier of SiC Coated Top Plate for LPE PE2061S in China. The SiC Coated Top Plate for LPE PE2061S we provide is designed for LPE silicon epitaxial reactors and is located on the top together with the barrel base. This SiC Coated Top Plate for LPE PE2061S has excellent characteristics such as high purity, excellent thermal stability and uniformity, which helps to grow high-quality epitaxial layers. No matter what product you need, we look forward to your inquiry.

VeTek Semiconductor is a professional China SiC Coated Top Plate for LPE PE2061S manufacturer and supplier.

The VeTeK Semiconductor SiC Coated Top Plate for LPE PE2061S in silicon epitaxial equipment, used in conjunction with a barrel type body susceptor to support and hold the epitaxial wafers (or substrates) during the epitaxial growth process.

The SiC Coated Top Plate for LPE PE2061S is typically made of high-temperature stable graphite material. VeTek Semiconductor carefully considers factors such as thermal expansion coefficient when selecting the most suitable graphite material, ensuring a strong bond with the silicon carbide coating.

The SiC Coated Top Plate for LPE PE2061S exhibits excellent thermal stability and chemical resistance to withstand the high-temperature and corrosive environment during epitaxy growth. This ensures long-term stability, reliability, and protection of the wafers.

In silicon epitaxial equipment, the primary function of the whole CVD SiC coated reactor is to support the wafers and provide a uniform substrate surface for the growth of epitaxial layers. Additionally, it allows for adjustments in the position and orientation of the wafers, facilitating control over temperature and fluid dynamics during the growth process to achieve desired growth conditions and epitaxial layer characteristics.

VeTek Semiconductor's products offer high precision and uniform coating thickness. The incorporation of a buffer layer also extends the product's lifespan. in silicon epitaxial equipment, used in conjunction with a barrel-type body susceptor to support and hold the epitaxial wafers (or substrates) during the epitaxial growth process.


CVD SIC COATING FILM CRYSTAL STRUCTURE


Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain Size 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young's Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1


VeTek Semiconductor Production Shop

VeTek Semiconductor Production Shop


Overview of the semiconductor chip epitaxy industry chain:

Overview of the semiconductor chip epitaxy industry chain


Hot Tags: SiC Coated Top Plate for LPE PE2061S
Send Inquiry
Contact Info
For inquiries about Silicon Carbide Coating, Tantalum Carbide Coating, Special Graphite or price list, please leave your email to us and we will be in touch within 24 hours.
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept