Web Menu

Product Search

Language

Products

China Epitaxial Susceptor Manufacturer, Supplier, Factory

We always follow the principle "Quality Very first, Prestige Supreme". We have been fully committed to delivering our customers with competitively priced high-quality products and solutions, prompt delivery and experienced services for Epitaxial Susceptor, CVD SiC Coated Wafer Baffles, Epitaxial Layer Growth, Single Crystal Growth, Silicon epitaxial, We guaranteed high-quality, if clients were not pleased together with the products' good quality, you can return inside of 7days with their original states.
Epitaxial Susceptor, By integrating manufacturing with foreign trade sectors, we can provide total customer solutions by guaranteeing the delivery of right products to the right place at the right time, which is supported by our abundant experiences, powerful production capability, consistent quality, diversified products and the control of the industry trend as well as our maturity before and after sales services. We'd like to share our ideas with you and welcome your comments and questions.

Related Products

Hot Products

  • Silicon Carbide Ceramic Coating

    Silicon Carbide Ceramic Coating

    As a professional Silicon Carbide Ceramic Coating manufacturer and supplier in China, Vetek Semiconductor's Silicon Carbide Ceramic Coating is widely used on key components of semiconductor manufacturing equipment, especially when CVD and PECVD processes are involved. Welcome your inquiry.
  • CVD SiC coating Dummy wafer

    CVD SiC coating Dummy wafer

    As a leading Chinese sic wafer manufacturers and suppliers, VeTek Semiconductor CVD SiC coating Dummy wafer is a specialized tool in semiconductor manufacturing, mainly used for the purpose of silicon wafer testing and wafer testing process. Your further inquiries are welcome.
  • Three-petal Graphite Crucible

    Three-petal Graphite Crucible

    VeTek Semiconductor's Three-petal Graphite Crucible is made of high purity graphite material processed by surface pyrolytic carbon coating, which is used to pull single crystal thermal field. Compared with traditional crucible, the structure of three-lobe design is more convenient to install and disassemble, improve work efficiency, and the impurities below 5ppm can meet the application of semiconductor and photovoltaic industry.
  • AMAT 0200-03201 CVD SiC Wafer Lift Pin

    AMAT 0200-03201 CVD SiC Wafer Lift Pin

    This AMAT 0200-03201 Wafer Lift Pin from VeTek starts with high-purity graphite, then we add a dense CVD SiC coating on top. It’s made for 300mm epitaxy systems and Applied Materials EPI reactors. Why graphite and SiC? Graphite handles heat really well. The SiC layer takes on corrosive gases and doesn’t wear out fast. The thin wall design? That’s for cleaner wafer lifting and positioning, fewer particles, and longer part life under high temperatures. We also make similar SiC coated graphite parts for ASM, Aixtron, and LPE systems. Looking forward to your inquiry.
  • TaC Coated Ring for SiC Epitaxial Reactor

    TaC Coated Ring for SiC Epitaxial Reactor

    VeTek Semiconductor is a leading manufacturer and technology innovator of TaC Coated Ring for SiC Epitaxial Reactor in China, focusing on providing high-performance solutions for SiC epitaxial reactors. We have many years of experience in TaC coating technology. TaC Coated Ring has the characteristics of high purity, high stability, excellent corrosion resistance, etc., and can provide long-term stable performance in the harsh working environment of epitaxial reactors. We look forward to establishing a long-term strategic partnership with you.
  • TaC Coating Chuck

    TaC Coating Chuck

    VeTek Semiconductor's TaC Coating Chuck features a high-quality coating the surface, known for its outstanding high-temperature resistance and chemical inertness, particularly in silicon carbide (SiC) epitaxy(EPI) processes. With its exceptional features and superior performance, our TaC Coating Chuck offers several key advantages.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.

  • What is the Core Material for SiC Growth ?

    In the preparation of high-quality and high-yield silicon carbide substrates, the core requires precise control of production temperature by good thermal field materials. Currently, the thermal field crucible kits mainly used are high-purity graphite structural components, whose functions are to heat molten carbon powder and silicon powder as well as to maintain heat.

  • Why is SiC PVT Crystal Growth Stable in Mass Production?

    For industrial-scale production of silicon carbide substrates, the success of a single growth run is not the end goal. The real challenge lies in ensuring that crystals grown across different batches, tools, and time periods maintain a high level of consistency and repeatability in quality. In this context, the role of tantalum carbide (TaC) coating goes beyond basic protection—it becomes a key factor in stabilizing the process window and safeguarding product yield.

  • What are the differences between MBE and MOCVD technologies?

    This article mainly discusses the respective process advantages and differences of Molecular Beam Epitaxy process and Metal-organic chemical vapour deposition technologies.

  • 8-inch SiC epitaxial furnace and homoepitaxial process research

    8-inch SiC epitaxial furnace and homoepitaxial process research

  • Application and research of silicon carbide ceramics in the field of photovoltaics - Vetek Semiconductor

    With the development of the solar photovoltaic industry, diffusion furnaces and LPCVD furnaces are the main equipment for the production of solar cells, which directly affect the efficient performance of solar cells. Based on the comprehensive product performance and usage cost, silicon carbide ceramic materials have more advantages in the field of solar cells than quartz materials. The application of silicon carbide ceramic materials in the photovoltaic industry can greatly help photovoltaic enterprises reduce auxiliary material investment costs, improve product quality and competitiveness. The future trend of silicon carbide ceramic materials in the photovoltaic field is mainly towards higher purity, stronger load-bearing capacity, higher loading capacity, and lower cost.

  • GaN-based low-temperature epitaxy technology

    This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

Related Search

Blue Green LED Epitaxial SusceptorCVD SiC coated epitaxial susceptorCVD TaC coating planetary SiC epitaxial susceptorDeep-UV LED Epitaxial SusceptorGaN Epitaxial SusceptorLED Epitaxial SusceptorMOCVD Epitaxial SusceptorSiC epitaxial susceptorSiC planetary epitaxial susceptorSilicon-based GaN Epitaxial SusceptorWafer epitaxial susceptor

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies.Privacy Policy
RejectAccept