Large sized resistance heating SiC crystal growth furnace

Technical Parameters

Core Advantages

 ● Full-Size Compatibility

Enables stable growth of 6-inch, 8-inch, and 12-inch silicon carbide crystals, fully compatible with conductive, semi-insulating, and N-type material systems. It covers the production needs of products with different specifications and adapts to diverse application scenarios.

● Strong Process Stability

The 8-inch crystals have excellent 4H polytype consistency, stable surface shape, and high repeatability; the 12-inch silicon carbide crystal growth technology has completed verification with high mass production feasibility.

● Low Crystal Defect Rate

Through precise control of temperature, pressure, and power, crystal defects are effectively reduced with key indicators meeting standards—EPD=1435 ea/cm², BPD=381 ea/cm², TSD=0 ea/cm², and TED=1054 ea/cm². All defect indicators meet high-grade crystal quality requirements, significantly improving ingot yield.

● Controllable Operating Costs

It has the lowest energy consumption among similar products. Core components (such as thermal insulation shields) have a long replacement cycle of 6-12 months, reducing comprehensive operating costs.

● Plug-and-Play Convenience

Customized recipe and process packages based on equipment characteristics, verified through long-term and multi-batch production, allowing immediate production after installation.

● Safety and Reliability

Adopts a special anti-arc spark design to eliminate potential safety hazards; real-time monitoring and early warning functions proactively avoid operational risks.

● Excellent Vacuum Performance

The ultimate vacuum and pressure rise rate indicators exceed internationally leading levels, ensuring a clean environment for crystal growth.

● Intelligent Operation and Maintenance

Features an intuitive HMI interface combined with comprehensive data recording, supporting optional remote monitoring functions for efficient and convenient production management.

Visual Display of Core Performance

Temperature Control Accuracy Curve

Temperature control accuracy of the crystal growth furnace ≤ ±0.3°C; Overview of the temperature curve

Pressure Control Accuracy Graph

Pressure control accuracy of the crystal growth furnace: 1.0 Torr, Pressure control accuracy: 0.001 Torr

Power Stability Precision

Stability and consistency between furnaces/batches: The stability accuracy of power

Under the crystal growth status, the accuracy of power control during stable crystal growth is ±0.15%.

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