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China GaN Epitaxial Susceptor Manufacturer, Supplier, Factory

Just about every member from our large efficiency income crew values customers' wants and enterprise communication for GaN Epitaxial Susceptor, GaN epitaxial growth process, Chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), SGL graphite, The concept of our organization is "Sincerity, Speed, Provider, and Satisfaction". We are going to follow this concept and earn more and more customers' satisfaction.
GaN Epitaxial Susceptor, With the first-class products, excellent service, fast delivery and the best price, we have won highly praise foreign customers'. Our products have been exported to Africa, the Middle East, Southeast Asia and other regions.

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  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    VeTek Semiconductor’s TaC Coated Graphite Susceptor uses chemical vapor deposition(CVD) method to prepare tantalum carbide coating on the surface of graphite parts. This process is the most mature and has the best coating properties. TaC Coated Graphite Susceptor can extend the service life of graphite components, inhibit the migration of graphite impurities, and ensure the quality of epitaxy.We are looking forward to your inquiry.
  • Silicon Carbide Cantilever Paddle

    Silicon Carbide Cantilever Paddle

    VeTek Semiconductor's Silicon Carbide Cantilever Paddle is an important component in the semiconductor manufacturing process, especially suitable for diffusion furnaces or LPCVD furnaces in high-temperature processes such as diffusion and RTP. Our Silicon Carbide Cantilever Paddle is carefully designed and manufactured with excellent high-temperature resistance and mechanical strength, and can safely and reliably transport wafers to the process tube under harsh process conditions for various high-temperature processes such as diffusion and RTP. We look forward to becoming your long-term partner in China.Feel free to inquire us.
  • Tantalum Carbide Coating Support

    Tantalum Carbide Coating Support

    As a professional Tantalum Carbide Coating Support product manufacturer and factory in China, VeTek Semiconductor Tantalum Carbide Coating Support is usually used for surface coating of structural components or support components in semiconductor equipment, especially for surface protection of key equipment components in semiconductor manufacturing processes such as CVD and PVD. Welcome your further consultation.
  • TaC Coating Chuck

    TaC Coating Chuck

    VeTek Semiconductor's TaC Coating Chuck features a high-quality coating the surface, known for its outstanding high-temperature resistance and chemical inertness, particularly in silicon carbide (SiC) epitaxy(EPI) processes. With its exceptional features and superior performance, our TaC Coating Chuck offers several key advantages.We are committed to providing quality products at competitive prices and look forward to being your long-term partner in China.
  • SiC Coating Collector Bottom

    SiC Coating Collector Bottom

    With our expertise in CVD SiC coating manufacturing, VeTek Semiconductor proudly presents Aixtron SiC Coating Collector Bottom,center and top. These SiC Coating Collector Bottom is constructed using high purity graphite and are coated with CVD SiC, ensuring impurity below 5ppm. Feel free to reach out to us for further information and inquiries.
  • LED EPI Susceptor

    LED EPI Susceptor

    VeTek Semiconductor is a leading supplier of TaC coatings and SiC coating graphite parts. We specialize in the production of cutting-edge LED EPI Susceptors, essential for LED epitaxy processes. Looking forward to your further consultation.

  • Is Porous Graphite The Key To Faster Charging Batteries

    We’ve all felt that moment of panic. Your phone battery is at 5%, you have minutes to spare, and every second plugged in feels like an eternity. What if the secret to ending this anxiety lies not in a completely new chemistry, but in reimagining a fundamental material within the battery itself? For two decades at the forefront of tech, I’ve seen trends come and go. But the buzz around Porous Graphite feels different. It isn't just an incremental step; it represents a fundamental shift in how we approach energy storage design.

  • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

    SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

  • What is an Electrostatic Chuck (ESC)?

    The electrostatic chuck(ESC), also known as the electrostatic chuck (ESC, e-chuck), is a fixture that uses the principle of electrostatic adsorption to hold and fix the adsorbed material. It is suitable for vacuum and plasma environments.

  • Sanan Optoelectronics Co., Ltd.: 8-inch SiC chips are expected to be put into production in December!

    As a leading manufacturer in the SiC industry, Sanan Optoelectronics' related dynamics have received widespread attention in the industry. Recently, Sanan Optoelectronics disclosed a series of latest developments, involving 8-inch transformation, new substrate factory production, establishment of new companies, government subsidies and other aspects.

  • Tantalum carbide technology breakthrough, SiC epitaxial pollution reduced by 75%?

    Recently, the German research institute Fraunhofer IISB has made a breakthrough in the research and development of tantalum carbide coating technology, and developed a spray coating solution that is more flexible and environmentally friendly than the CVD deposition solution, and has been commercialized.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

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Silicon-based GaN Epitaxial Susceptor

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