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China GaN Epitaxial Susceptor Manufacturer, Supplier, Factory

Just about every member from our large efficiency income crew values customers' wants and enterprise communication for GaN Epitaxial Susceptor, GaN epitaxial growth process, Chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), SGL graphite, The concept of our organization is "Sincerity, Speed, Provider, and Satisfaction". We are going to follow this concept and earn more and more customers' satisfaction.
GaN Epitaxial Susceptor, With the first-class products, excellent service, fast delivery and the best price, we have won highly praise foreign customers'. Our products have been exported to Africa, the Middle East, Southeast Asia and other regions.

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    MOCVD Epitaxial Susceptor for 4" Wafer is designed to grow 4" epitaxial layer.VeTek Semiconductor is a professional manufacturer and supplier, who is dedicated to providing high-quality MOCVD Epitaxial Susceptor for 4" Wafer. With tailored graphite material and SiC coating process. We are able to deliver expert and efficient solutions to our clients.You are welcome to communicate with us.
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    Wafer Handling End Effector

    Wafer Handling End Effector is an important part in the semiconductor processing, transporting wafers and protecting their surfaces from damage. VeTek Semiconductor, as a leading manufacturer and supplier of Wafer Handling End Effector, is always committed to providing customers with excellent Wafer Handling Robotic Arm products and the best services. we look forward to becoming your long-term partner in wafer handling tools products.
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    Alumina Ceramic Vacuum Chuck

    VeTek Semiconductor is a professional Alumina Ceramic Vacuum Chuck manufacturer and factory in China. Alumina Ceramic Vacuum Chuck uses high-purity aluminum oxide ceramics with excellent heat resistance, chemical resistance and mechanical strength. It is mainly used to fix and support wafers and substrates. It is a high-performance equipment for semiconductor processing. Welcome your further inquiries.
  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Veteksemicon's SiC Coated MOCVD Susceptor is a device with excellent process, durability and reliability. They can withstand high temperature and chemical environments, maintain stable performance and long life, thereby reducing the frequency of replacement and maintenance and improving production efficiency. Our MOCVD Epitaxial Susceptor is renowned for its high density, excellent flatness and excellent thermal control, making it the preferred equipment in harsh manufacturing environments. Looking forward to cooperating with you.Welcome to consult at any time.
  • Tantalum Carbide Coated Halfmoon Part for LPE

    Tantalum Carbide Coated Halfmoon Part for LPE

    VeTek Semiconductor is a leading supplier of Tantalum Carbide Coated Halfmoon Part for LPE in China, focusing on TaC coating technology for many years. Our Tantalum Carbide Coated Halfmoon Part for LPE is designed for liquid phase epitaxy process and can withstand high temperature of over 2000 degrees Celsius. With excellent material performance and process innovation, our product life is at the leading level in the industry. VeTek Semiconductor looks forward to being your long-term partner in China.
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    The CVD SiC coating ring is one of the important parts of the halfmoon parts. Together with other parts, it forms the SiC epitaxial growth reaction chamber. VeTek Semiconductor is a professional CVD SiC coating ring manufacturer and supplier. According to the customer's design requirements, we can provide the corresponding CVD SiC coating ring at the most competitive price. VeTek Semiconductor looks forward to becoming your long-term partner in China.

  • How to choose MOCVD graphite tray?

    MOCVD graphite trays play an important role in the epitaxial process. This article makes a detailed analysis on the selection of MOCVD graphite trays from the perspectives of material properties and application scenarios.

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  • Different technical routes of SiC epitaxial growth furnace

    Silicon carbide substrates have many defects and cannot be processed directly. A specific single crystal thin film needs to be grown on them through an epitaxial process to make chip wafers. This thin film is the epitaxial layer. Almost all silicon carbide devices are realized on epitaxial materials. High-quality silicon carbide homogeneous epitaxial materials are the basis for the development of silicon carbide devices. The performance of epitaxial materials directly determines the realization of the performance of silicon carbide devices.

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