Three-petal Graphite Crucible

VeTek Semiconductor's Three-petal Graphite Crucible designed for the growth process of monocrystalline silicon by CZ method, the three-petal structure graphite crucible is made of isostatic high purity graphite material. Through the innovative three-petal structure, the traditional integrated crucible can effectively solve the disassembly difficulties, thermal stress concentration and other industry pain points, and is widely used in photovoltaic silicon wafers, semiconductor wafers and other high-end manufacturing fields.

Core process highlights

1. Ultra-precision graphite processing technology

Material purity: The use of isostatic pressed graphite substrate with ash content < 5ppm if required and generally ＜10ppm to ensure zero pollution in the silicon melting process

Structural strengthening: After being graphitized at 2200℃, the bending strength is ≥45MPa, and the coefficient of thermal expansion is ≤4.6×10⁻⁶/℃

Surface treatment: 10-15μm pyrolytic carbon coating is deposited by CVD process to improve oxidation resistance (weight loss < 1.5%/100h@1600℃).

2. Innovative three-petal structure design

Modular assembly: 120° equipartition three-lobe structure, installation and disassembly efficiency increased by 300%

Stress release design: The split structure effectively disperses the thermal expansion stress and extends the service life to more than 200 cycles

Precision fit: the gap between the valves is < 0.1mm, and the high temperature ceramic adhesive ensures zero leakage in the silicon melting process

3. Customized processing services

Support Φ16"-Φ40" full-size customization, wall thickness tolerance control ±0.5mm

The gradient density structure 1.83g/cm³ can be selected to optimize the thermal field distribution

Provide value-added processes such as boron nitride composite coating and rhenium metal edge strengthening

Typical application scenario

Photovoltaic industry

Monocrystalline silicon rod continuous drawing: suitable for G12 large size silicon wafer production, support ≥500kg loading capacity

N-type TOPCon battery: Ultra-low impurity migration guarantees minority life > 2ms

Thermal field upgrading: compatible with mainstream single crystal furnace models (PVI, Ferrotec, etc.)

Semiconductor manufacturing

8-12 inch semiconductor-grade monocrystalline silicon growth: meet SEMI standard Class-10 cleanliness requirements

Special doped crystals: precise control of boron/phosphorus distribution uniformity

Third generation semiconductor: compatible SiC single crystal preparation process

Scientific research field

Research and development of ultra-thin silicon wafers for space solar cells

Growth test of new crystal materials (germanium, gallium arsenide)

Limit parameter research (3000℃ ultra-high temperature melting experiment)

Quality assurance system

ISO 9001/14001 dual system certification

Provide material test report for customers (XRD composition analysis, SEM microstructure)

Whole process traceability system (laser marking + blockchain storage)