China Blue Green LED Epitaxial Susceptor Manufacturer, Supplier, Factory

The working principle of the epitaxial furnace is to deposit semiconductor materials on a substrate under high temperature and high pressure. Silicon epitaxial growth is to grow a layer of crystal with the same crystal orientation as the substrate and different thickness on a silicon single crystal substrate with a certain crystal orientation. This article mainly introduces the silicon epitaxial growth methods: vapor phase epitaxy and liquid phase epitaxy.

In 2025, the European semiconductor industry will once again meet at the largest semiconductor trade fair SEMICON Europa in Munich from November 18-21

CVD silicon carbide coating is produced by depositing a dense SiC layer onto high-purity graphite through controlled gas-phase and surface reactions. This article explains substrate preparation, MTS-based CVD growth, nucleation and mass transfer, coating thickness and uniformity, SiC/graphite interface stress, common defects and semiconductor-grade inspection. It also shows why process parameters and component geometry must be engineered together for susceptors and wafer carriers used in epitaxy and MOCVD.

In the process of growing silicon carbide (SiC) crystals via the Physical Vapor Transport (PVT) method, the extreme high temperature of 2000–2500 °C is a “double-edged sword” — while it drives the sublimation and transport of source materials, it also dramatically intensifies impurity release from all materials within the thermal field system, especially trace metallic elements contained in conventional graphite hot-zone components. Once these impurities enter the growth interface, they will directly damage the core quality of the crystal. This is the fundamental reason why tantalum carbide (TaC) coatings have become a “mandatory option” rather than an “optional choice” for PVT crystal growth.

Through continuous technological progress and in-depth mechanism research, 3C-SiC heteroepitaxial technology is expected to play a more important role in the semiconductor industry and promote the development of high-efficiency electronic devices.

The Dechuck principle of the Electrostatic Chuck is a key part of its workflow that involves electrostatic force elimination and wafer release mechanisms.