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SiC Coated Graphite Barrel Susceptor
  • SiC Coated Graphite Barrel SusceptorSiC Coated Graphite Barrel Susceptor

SiC Coated Graphite Barrel Susceptor

VeTek Semiconductor SiC Coated Graphite Barrel Susceptor is a high-performance wafer tray designed for semiconductor epitaxy processes, offering excellent thermal conductivity, high-temperature and chemical resistance, a high-purity surface, and customizable options to enhance production efficiency. Welcome your further inquiry.

VeTek Semiconductor SiC Coated Graphite Barrel Susceptor is an advanced solution designed specifically for semiconductor epitaxy processes, particularly in LPE reactors. This highly efficient wafer tray is engineered to optimize the growth of semiconductor materials, ensuring superior performance and reliability in demanding manufacturing environments. 


Veteksemi's Graphite Barrel Susceptor products have the following outstanding advantages


High-Temperature and Chemical Resistance: Manufactured to withstand the rigors of high-temperature applications, the SiC Coated Barrel Susceptor exhibits remarkable resistance to thermal stress and chemical corrosion. Its SiC coating protects the graphite substrate from oxidation and other chemical reactions that can occur in harsh processing environments. This durability not only extends the product's lifespan but also reduces the frequency of replacements, contributing to lower operational costs and increased productivity.


Exceptional Thermal Conductivity: One of the standout features of the SiC Coated Graphite Barrel Susceptor is its excellent thermal conductivity. This property allows for uniform temperature distribution across the wafer, essential for achieving high-quality epitaxial layers. The efficient heat transfer minimizes thermal gradients, which can lead to defects in semiconductor structures, thereby enhancing the overall yield and performance of the epitaxy process.


High-Purity Surface: The high-purity surface of the CVD SiC Coated Barrel Susceptor is crucial for maintaining the integrity of the semiconductor materials being processed. Contaminants can adversely affect the electrical properties of semiconductors, making the purity of the substrate a critical factor in successful epitaxy. With its refined manufacturing processes, the SiC coated surface ensures minimal contamination, promoting better-quality crystal growth and overall device performance.


Applications in Semiconductor Epitaxy process

SiC Coated Graphite Barrel Susceptor Working Schematic


The primary application of the SiC Coated Graphite Barrel Susceptor lies within LPE reactors, where it plays a pivotal role in the growth of high-quality semiconductor layers. Its ability to maintain stability under extreme conditions while facilitating optimal heat distribution makes it an essential component for manufacturers focusing on advanced semiconductor devices. By utilizing this susceptor, companies can expect enhanced performance in the production of high-purity semiconductor materials, paving the way for the development of cutting-edge technologies.


VeTeksemi has long been committed to providing advanced technology and product solutions to the semiconductor industry. VeTek Semiconductor's SiC-coated graphite barrel susceptors offer customized options tailored to specific applications and requirements. Whether it is modifying dimensions, enhancing specific thermal properties, or adding unique features for specialized processes, VeTek Semiconductor is committed to providing solutions that fully meet customer needs. We sincerely look forward to becoming your long-term partner in China.


CVD SIC COATING FILM CRYSTAL STRUCTURE

CVD SIC COATING FILM CRYSTAL STRUCTURE


Basic physical properties of CVD SiC coating


Basic physical properties of CVD SiC coating
Property
Typical Value
Crystal Structure
FCC β phase polycrystalline, mainly (111) oriented
CoatingDensity
3.21 g/cm³
SiC coating Hardness
2500 Vickers hardness(500g load)
Grain Size
2~10μm
Chemical Purity
99.99995%
Heat Capacity
640 J·kg-1·K-1
Sublimation Temperature
2700℃
Flexural Strength
415 MPa RT 4-point
Young' s Modulus
430 Gpa 4pt bend, 1300℃
Thermal Conductivity
300W·m-1·K-1
Thermal Expansion(CTE)
4.5×10-6K-1


VeTek Semiconductor SiC Coated Graphite Barrel Susceptor produc shops


sic coated Graphite substrateSiC Coated Graphite Barrel Susceptor product testSilicon carbide ceramics processingSemiconductor process equipment

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