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China LPE reactor Manufacturer, Supplier, Factory

We know that we only thrive if we can guarantee our combined rate competiveness and good quality advantageous at the same time for LPE reactor, SiC Coated Graphite Barrel Susceptor, SiC Coated Barrel Susceptor, CVD SiC Coated Barrel Susceptor, CVD SiC Coating, Many years of work experience, we have realized the importance of providing good quality products and the best before-sales and after-sales services.
LPE reactor, Customer satisfaction is our goal. We're looking forward to cooperating with you and providing our best services in your case. We warmly welcome you to contact us and remember to feel free to contact us. Browse our online showroom to see what we can do for yourself. And then E-mail us your specifications or inquiries today.

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  • SiC coating Monocrystalline silicon epitaxial tray

    SiC coating Monocrystalline silicon epitaxial tray

    SiC coating Monocrystalline silicon epitaxial tray is an important accessory for monocrystalline silicon epitaxial growth furnace, ensuring minimal pollution and stable epitaxial growth environment. VeTek Semiconductor's SiC coating Monocrystalline silicon epitaxial tray has an ultra-long service life and provides a variety of customization options. VeTek Semiconductor looks forward to becoming your long-term partner in China.
  • TaC coated wafer susceptor

    TaC coated wafer susceptor

    VeTek Semiconductor TaC Coated Wafer Susceptor is a graphite tray coated with tantalum carbide for silicon carbide epitaxial growth to improve wafer quality and performance. VeTek is selected because of its advanced coating technology and durable solutions to ensure excellent SiC epitaxy results and extended susceptor life, welcome your further inquiries.
  • High Purity SiC Cantilever Paddle

    High Purity SiC Cantilever Paddle

    VeTek Semiconductor is a leading manufacturer and supplier of High Purity SiC Cantilever Paddle product in China. High Purity SiC Cantilever Paddles are commonly used in semiconductor diffusion furnaces as wafer transfer or loading platforms.
  • CVD SiC Coating Protector

    CVD SiC Coating Protector

    Vetek Semiconductor's CVD SiC Coating Protector used is LPE SiC epitaxy, The term "LPE" usually refers to Low Pressure Epitaxy (LPE) in Low Pressure Chemical Vapor Deposition (LPCVD). In semiconductor manufacturing, LPE is an important process technology for growing single crystal thin films, often used to grow silicon epitaxial layers or other semiconductor epitaxial layers.Pls no hesitate to contact us for more questions.
  • Semiconductor Quartz tank

    Semiconductor Quartz tank

    VeTek semiconductor is a leading semiconductor quartz tank manufacturer and factory in China. In fact, quartz tank is particularly important in the wet processing used in wafer manufacturing. Welcome your further inquiries.
  • SiC Coated MOCVD Susceptor

    SiC Coated MOCVD Susceptor

    Veteksemicon's SiC Coated MOCVD Susceptor is a device with excellent process, durability and reliability. They can withstand high temperature and chemical environments, maintain stable performance and long life, thereby reducing the frequency of replacement and maintenance and improving production efficiency. Our MOCVD Epitaxial Susceptor is renowned for its high density, excellent flatness and excellent thermal control, making it the preferred equipment in harsh manufacturing environments. Looking forward to cooperating with you.Welcome to consult at any time.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • Why does SiC coated Graphite Susceptor fail? - VeTek Semiconductor

    During the SiC epitaxial growth process, SiC coated graphite suspension failure may occur. This paper conducts a rigorous analysis of the failure phenomenon of SiC coated graphite suspension, which mainly includes two factors: SiC epitaxial gas failure and SiC coating failure.

  • Application of TaC-Coated Graphite Parts in Single Crystal Furnaces

    In the growth of SiC and AlN single crystals using the physical vapor transport (PVT) method, crucial components such as the crucible, seed holder, and guide ring play a vital role. As depicted in Figure 2 [1], during the PVT process, the seed crystal is positioned in the lower temperature region, while the SiC raw material is exposed to higher temperatures (above 2400 ℃).

  • Why does SiC coating receive so much attention? - VeTek Semiconductor

    SiC has high hardness, thermal conductivity, and corrosion resistance, making it ideal for semiconductor manufacturing. CVD SiC coating is created through chemical vapor deposition, providing high thermal conductivity, chemical stability, and a matching lattice constant for epitaxial growth. Its low thermal expansion and high hardness ensure durability and precision, making it essential in applications like wafer carriers, preheating rings, and more. VeTek Semiconductor specializes in custom SiC coatings for diverse industry needs.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • Application of carbon-based thermal field materials in silicon carbide crystal growth

    Silicon carbide (SiC)'s Key growth methods include PVT, TSSG, and HTCVD, each with distinct advantages and challenges. Carbon-based thermal field materials like insulation systems, crucibles, TaC coatings, and porous graphite enhance crystal growth by providing stability, thermal conductivity, and purity, essential for SiC's precise fabrication and application.

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