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China Homoepitaxy Manufacturer, Supplier, Factory

We are commitment to offer the competitive price ,outstanding products quality, as well as fast delivery for Homoepitaxy, Silicon Wafer Production, Silicon Based Epitaxy, Graphite Susceptors for Silicon, Epitaxial Susceptor, With our rules of " small business track record, partner trust and mutual benefit", welcome all of you to definitely work together , expand with each other.
Homoepitaxy, We'll supply much better products and solutions with diversified designs and expert services. At the same time, welcome OEM, ODM orders, invite friends at home and abroad together common development and achieve win-win, integrity innovation, and expand business opportunities! If you have any question or need more information be sure to feel free to contact us. We are looking forward to receiving your enquiries soon.

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  • TaC Coated Guide Ring

    TaC Coated Guide Ring

    TaC Coated Guide Ring is made of high-quality graphite and TaC coating. In the preparation of SiC crystals by PVT method, VeTek Semiconductor's TaC coated guide ring is mainly used to guide and control the airflow, optimize the single crystal growth process, and improve the single crystal yield. With excellent TaC coating technology, our products have excellent high temperature resistance, corrosion resistance and good mechanical properties.
  • SiC Ceramics Membrane

    SiC Ceramics Membrane

    Veteksemicon SiC ceramics membranes are a type of inorganic membrane and belong to solid membrane materials in membrane separation technology. SiC membranes are fired at a temperature above 2000℃. The surface of the particles is smooth and round. There are no closed pores or channels in the support layer and each layer. They are usually composed of three layers with different pore sizes.
  • Porous Ceramic Vacuum Chuck

    Porous Ceramic Vacuum Chuck

    Vetek Semiconductor's Porous Ceramic Vacuum Chuck is made of silicon carbide ceramic (SiC) material, which has excellent high temperature resistance, chemical stability and mechanical strength. It is an indispensable core component in the semiconductor process. Welcome your further inquiries.
  • CVD SiC coated wafer susceptor

    CVD SiC coated wafer susceptor

    Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.
  • Silicon Carbide Wafer Boat

    Silicon Carbide Wafer Boat

    VeTek Semiconductor's high-purity Silicon Carbide Wafer Boat is made of extremely pure silicon carbide material with excellent thermal stability, mechanical strength and chemical resistance. High-purity Silicon Carbide Wafer Boat is used in hot zone applications in semiconductor manufacturing, especially in high-temperature environments, and plays an important role in protecting wafers, transporting materials and maintaining stable processes. VeTek Semiconductor will continue to work hard to innovate and improve the performance of high-purity Silicon Carbide Wafer Boat to meet the evolving needs of semiconductor manufacturing. We look forward to becoming your long-term partner in China.Feel free to inquire us.
  • CVD TaC Coating Cover

    CVD TaC Coating Cover

    CVD TaC coating cover provided by VeTek Semiconductor is a highly specialized component designed specifically for demanding applications. With its advanced features and exceptional performance, our CVD TaC coating cover offers several key advantages.Our CVD TaC coating cover provides the necessary protection and performance required for success.We looking forward to exploring potential cooperation with you!
  • Related Blog
  • Reviews

  • What is the difference between silicon carbide (SiC) and gallium nitride (GaN) applications? - VeTek Semiconductor

    SiC and GaN are wide bandgap semiconductors with advantages over silicon, such as higher breakdown voltages, faster switching speeds, and superior efficiency. SiC is better for high-voltage, high-power applications due to its higher thermal conductivity, while GaN excels in high-frequency applications thanks to its superior electron mobility.

  • TaC Coating: The Gatekeeper of Yield for 8-inch Silicon Carbide PVT Epitaxy

    8-inch SiC is now in volume production, but wafer yield — not capacity — separates the winners. This guide explains why TaC coating on graphite hot-zone parts decides yield, and how to qualify a supplier.

  • Research on SIC Wafer Carrier Technology

    ​SiC wafer carriers, as key consumables in the third-generation semiconductor industry chain, their technical characteristics directly affect the yield of epitaxial growth and device manufacturing. With the surging demand for high-voltage and high-temperature devices in industries such as 5G base stations and new energy vehicles, the research and application of SiC wafer carriers are now facing significant development opportunities.

  • Why SiC Coated Graphite Susceptor Are Essential for Semiconductor Epitaxy

    Learn how CVD SiC-coated graphite susceptors enhance epitaxial growth by improving thermal uniformity, reducing contamination, and extending component life in SiC, GaN, LED, and silicon semiconductor manufacturing.

  • What is Silicon Wafer CMP Polishing Slurry?

    Silicon wafer CMP (Chemical Mechanical Planarization) polishing slurry is a critical component in the semiconductor manufacturing process. It plays a pivotal role in ensuring that silicon wafers—used to create integrated circuits (ICs) and microchips—are polished to the exact level of smoothness required for the next stages of production

  • GaN-based low-temperature epitaxy technology

    This article mainly describes GaN-based low-temperature epitaxial technology, including the crystal structure of GaN-based materials, 3. epitaxial technology requirements and implementation solutions, the advantages of low-temperature epitaxial technology based on PVD principles, and the development prospects of low-temperature epitaxial technology.

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