SiC coated epitaxial reactor chamber

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Application: Veteksemicon SiC coated epitaxial reactor chamber is designed for demanding semiconductor epitaxial processes. By providing an extremely pure and stable high-temperature environment, it significantly improves the quality of SiC and GaN epitaxial wafers, making it a key cornerstone for manufacturing high-performance power chips and RF devices.

Services that can be provided: customer application scenario analysis, matching materials, technical problem solving.

Company profile：Veteksemicon has 2 laboratories, a team of experts with 20 years of material experience, with R&D and production, testing and verification capabilities.

Veteksemicon SiC coated epitaxial reactor chamber core advantages

1. Super corrosion resistance

Veteksemicon's reaction chamber employs a proprietary CVD process to deposit an extremely dense, high-purity silicon carbide coating on the substrate surface. This coating effectively resists the erosion of high-temperature corrosive gases such as HCl and H2, commonly encountered in SiC epitaxial processes, fundamentally solving the problems of surface porosity and particle shedding that may occur in traditional graphite components after long-term use. This characteristic ensures that the inner wall of the reaction chamber remains smooth even after hundreds of hours of continuous operation, significantly reducing wafer defects caused by chamber contamination.

2. High temperature stability

Thanks to the excellent thermal properties of silicon carbide, this reaction chamber can easily withstand continuous operating temperatures up to 1600°C. Its extremely low coefficient of thermal expansion ensures that the components minimize the accumulation of thermal stress during repeated rapid heating and cooling, preventing microcracks or structural damage caused by thermal fatigue. This outstanding thermal stability provides a crucial process window and reliability guarantee for epitaxial processes, especially SiC homoepitaxy which requires high-temperature environments.

3. High purity and low pollution

We are keenly aware of the decisive impact of epitaxial layer quality on the final device performance. Therefore, Veteksemicon pursues the highest possible coating purity, ensuring it reaches a level of over 99.9995%. Such high purity effectively suppresses the migration of metallic impurities (such as Fe, Cr, Ni, etc.) into the process atmosphere at high temperatures, thus avoiding the fatal impact of these impurities on the quality of the epitaxial layer crystal. This lays a solid material foundation for manufacturing high-performance, high-reliability power semiconductors and radio frequency devices.

4. Long life design

Compared to uncoated or conventional graphite components, reaction chambers protected by SiC coatings offer several times longer service life. This is primarily due to the coating's comprehensive protection of the substrate, preventing direct contact with corrosive process gases. This extended lifespan translates directly into significant cost benefits—customers can substantially reduce equipment downtime, spare parts procurement, and maintenance labor costs associated with periodic replacement of chamber components, thereby effectively lowering overall production operating costs.

5. Ecological chain verification endorsement

Veteksemicon SiC coated epitaxial reactor chamber' ecological chain verification covers raw materials to production, has passed international standard certification, and has a number of patented technologies to ensure its reliability and sustainability in the semiconductor and new energy fields.

For detailed technical specifications, white papers, or sample testing arrangements, please contact our Technical Support Team to explore how Veteksemicon can enhance your process efficiency.