Silicon Carbide Coating

Veteksemicon High-purity SiC edge rings, specially designed for semiconductor etching equipment, feature outstanding corrosion resistance and thermal stability, significantly enhancing wafer yield

As a leading Chinese manufacturer and supplier of Silicon Carbide Coating products, Veteksemicon's SiC Coated Wafer Carrier for Etching plays an irreplaceable core role in the etching process with its excellent high temperature stability, outstanding corrosion resistance and high thermal conductivity.

Veteksemicon’s CVD SiC coated wafer susceptor is a cutting-edge solution for semiconductor epitaxial processes, offering ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.

Our SiC Coated Planetary Susceptor is a core component in the high temperature process of semiconductor manufacturing. Its design combines graphite substrate with silicon carbide coating to achieve comprehensive optimization of thermal management performance, chemical stability and mechanical strength.

Our SiC coated sealing ring for Epitaxy is a high-performance sealing component based on graphite or carbon-carbon composites coated with high-purity silicon carbide (SiC) by chemical vapor deposition (CVD), which combines the thermal stability of graphite with the extreme environmental resistance of SiC, and is designed for semiconductor epitaxial equipment (e.g., MOCVD, MBE).

Veteksemicon Single wafer epi graphite susceptor is designed for high-performance silicon carbide (SiC), gallium nitride (GaN) and other third generation semiconductor epitaxial process, and is the core bearing component of high-precision epitaxial sheet in mass production.Welcome your further inquiry.