SiC coated sealing ring for Epitaxy

Ⅰ. What is SiC Coated Seal Ring?

SiC Coated Seal Ring (Silicon Carbide Coated Seal Ring) is a precision sealing component designed for high temperature, highly corrosive semiconductor process environments. Its core is through the chemical vapor deposition (CVD) or physical vapor deposition (PVD) process, graphite or carbon composite material substrate surface evenly covered with a layer of high-purity silicon carbide (SiC) coating, the formation of both the mechanical strength of the substrate and the coating of high-performance sealing properties.  

Ⅱ. Product composition and core technology  

1. Substrate material:

Graphite or carbon-carbon composite material: the base material has the advantage of high heat resistance (can withstand more than 2000 ℃) and low coefficient of thermal expansion, thus ensuring dimensional stability under extreme conditions such as high temperature.  

Precision machining structure: The precision ring design can be perfectly adapted to the cavity of semiconductor equipment, thus ensuring the flatness of the sealing surface and good airtightness.  

2. Functional coating:  

High purity SiC coating (purity ≥99.99%): the thickness of Coaing is usually 10-50μm, through the CVD process to form a layer of dense non-porous surface structure, giving the sealing ring surface excellent chemical inertness and mechanical properties.

Ⅲ. Core Physical Properties and Advantages of SiC coated sealing ring for Epitaxy

Veteksemicon's SiC-coated sealing rings are ideal for semiconductor epitaxy processes because of their excellent performance under extreme conditions. Below are the specific physical properties of the product:

IV. Core Applications in Semiconductor Epitaxy Processing  

SiC coated sealing ring for Epitaxy is mainly used in MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) and other process equipment, specific functions include:  

1. Semiconductor equipment reaction chamber air tightness protection

Our SiC-coated sealing rings ensure that the dimensional tolerances (usually within ±0.01mm) of the interface with the equipment chamber (e.g. flange, base shaft) are as small as possible by customizing the ring structure. 

At the same time, the sealing ring is precision machined using CNC machine tools to ensure a uniform fit around the entire circumference of the contact surface, eliminating microscopic gaps. This effectively prevents the leakage of process gases (e.g. H₂, NH₃), ensures the purity of the epitaxial layer growth environment, and improves wafer yield.  

On the other hand, good gas tightness can also block the intrusion of external pollutants (O₂, H₂O), thus effectively avoiding defects in the epitaxial layer (such as dislocations, uneven doping of impurities).  

2. High temperature dynamic sealing support  

Adopting the principle of substrate-coating synergistic anti-deformation: due to the graphite substrate's low coefficient of thermal expansion (CTE ≈ 4.5×10-⁶/°C) is very small, and at extreme high temperatures (＞1000 ℃) the expansion is only 1/5 of the amount of metal seals, thus effectively avoiding the sealing surface separation caused by thermal deformation. Combined with the ultra-high hardness of the SiC coating (HV2500 or more), it can effectively resist scratches on the sealing surface caused by mechanical vibration or impact of particles, and maintain microscopic flatness.

V. Maintenance Recommendations

1.Regularly check the sealing surface wear (quarterly optical microscope inspection is recommended) to avoid sudden failure.  

2.Use special cleaners (such as anhydrous ethanol) to remove deposits, prohibit mechanical grinding to prevent damage to the SiC coating.