Single wafer epi graphite susceptor

Description：

Single wafer epi graphite susceptor includes a set of graphite tray, graphite ring and other accessories, using high purity graphite substrate + vapor deposition silicon carbide coating composite structure, taking into account high temperature stability, chemical inertia and thermal field uniformity. It is the core bearing component of high-precision epitaxial sheet in mass production.

Material innovation: Graphite +SiC coating

Graphite

● Ultra-high thermal conductivity (>130 W/m·K), rapid response to temperature control requirements, to ensure process stability.

● Low thermal expansion coefficient (CTE: 4.6×10⁻⁶/°C), reduce high temperature deformation, prolong service life.

CVD SiC coating

● Corrosion resistance. Resist attack by reaction gases such as H₂, HCl, and SiH₄. It avoids contamination of the epitaxial layer by volatilization of the base material.

● Surface densification: the coating porosity is less than 0.1%, which prevents the contact between graphite and wafer and prevents the diffusion of carbon impurities.

● High temperature tolerance: long-term stable work in the environment above 1600°C, adapt to the high temperature demand of SiC epitaxy.

Thermal field and airflow optimization design

Uniform thermal radiation structure

The susceptor surface is designed with multiple thermal reflection grooves, and the ASM device's thermal field control system achieves temperature uniformity within ±1.5°C (6-inch wafer, 8-inch wafer), ensuring consistency and uniformity of epitaxial layer thickness (fluctuation <3%).

Air steering technique

Edge diversion holes and inclined support columns are designed to optimize the laminar flow distribution of reaction gas on the wafer surface, reduce the difference in deposition rate caused by eddy currents, and improve doping uniformity.