SiC coated Satellite cover for MOCVD

As a leading SiC coated MOCVD satellite cover manufacturer in China, Veteksemcon is committed to providing high performance epitaxial process solutions to the semiconductor industry. Our MOCVD SiC coated covers are carefully designed and typically used in Satellite Susceptor System (SSS) to support and cover wafers or samples to optimize the growth environment and improve the epitaxial quality.

Key Materials and Structures

●  Substrate: SiC coated cover for is usually made of high purity graphite or ceramic substrate, such as Isostatic Graphite, to provide good mechanical strength and light weight.

●  Surface Coating: A high-purity silicon carbide (SiC) material coated using the chemical vapor deposition (CVD) process to enhance resistance to high temperatures, corrosion and particle contamination.

●  Form: Typically disk-shaped or with special structural designs to accommodate different models of MOCVD equipment (e.g., Veeco, Aixtron).

Uses and key roles in the MOCVD process:

The SiC coated Satellite cover for MOCVD is mainly used in the MOCVD epitaxial growth reaction chamber, and its functions include:

(1) Protecting wafers and optimizing temperature distribution

As a key heat shielding component in MOCVD equipment, it covers the perimeter of the wafer to reduce non-uniform heating and improve the uniformity of the growth temperature.

Characteristics: Silicon carbide coating has good high temperature stability and thermal conductivity (300W.m^-1-K^-1), which helps improve epitaxial layer thickness and doping uniformity.

(2) Prevent particle contamination and improve epitaxial layer quality

The dense and corrosion-resistant surface of SiC coating prevents source gases (e.g. TMGa, TMAl, NH₃) from reacting with the substrate during the MOCVD process and reduces particle contamination.

Characteristics: Its low adsorption characteristics reduce the deposition residue, improve the yield of GaN, SiC epitaxial wafer.

(3) High-temperature resistance, corrosion resistance, prolonging the service life of equipment

High temperature (>1000°C) and corrosive gases (e.g. NH₃, H₂) are used in the MOCVD process. SiC coatings are effective in resisting chemical erosion and reducing equipment maintenance costs.

Characteristics: Due to its low coefficient of thermal expansion (4.5×10^-6K^-1), SiC maintains dimensional stability and avoids distortion in thermal cycling environments.

CVD Coating FILM CRYSTAL STRUCTURE：

Basic physical properties of CVD SiC coating

Veteksemicon's SiC coated Satellite cover for MOCVD products shop: