Web Menu

Product Search

Language

Products

China Epitaxial Silicon Growth Manufacturer, Supplier, Factory

The corporation upholds the philosophy of ""Be No.1 in excellent, be rooted on credit rating and trustworthiness for growth"", will proceed to provide aged and new buyers from home and abroad whole-heatedly for Epitaxial Silicon Growth, SiC coated Satellite cover for MOCVD, SiC Coated Graphite Susceptor for MOCVD, SiC Coated MOCVD Susceptor, MOCVD Susceptor for Epitaxial Growth, Warmly welcome to cooperate and develop with us! we will continue to provide product with high quality and competitive price.
Epitaxial Silicon Growth, With nearly 30 years' experience in business, we have been confident in superior service, quality and delivery. We warmly welcome customers from all over the world to cooperate with our company for common development.

Related Products

Hot Products

  • SiC Coated Silicon Carbide Wafer Boat

    SiC Coated Silicon Carbide Wafer Boat

    SiC Coated Silicon Carbide Wafer Boat is designed with 165 slots to carry wafers.VeTek Semiconductor is professional manufacturer and supplier in China for SiC coated silicon carbide wafer boat, with years of experience in R&D and production, can control the quality well and offer a competitive price. Welcome for visiting our factory and have further discussion on cooperation.
  • Tantalum Carbide Coated Halfmoon Part for LPE

    Tantalum Carbide Coated Halfmoon Part for LPE

    VeTek Semiconductor is a leading supplier of Tantalum Carbide Coated Halfmoon Part for LPE in China, focusing on TaC coating technology for many years. Our Tantalum Carbide Coated Halfmoon Part for LPE is designed for liquid phase epitaxy process and can withstand high temperature of over 2000 degrees Celsius. With excellent material performance and process innovation, our product life is at the leading level in the industry. VeTek Semiconductor looks forward to being your long-term partner in China.
  • Carbon Carbon Composite PECVD Pallet

    Carbon Carbon Composite PECVD Pallet

    VeTek Semiconductor has been focusing on the research and development and production of carbon-based materials for many years. Our Carbon Carbon Composite PECVD Pallet is made of high-density carbon fiber, which has excellent high temperature resistance, good mechanical properties and excellent chemical stability, and plays an irreplaceable role in the photovoltaic PECVD process. We look forward to your inquiry and establishing a long-term strategic partnership with you to jointly promote technological progress and industrial development.
  • Silicon Carbide Coating Wafer Holder

    Silicon Carbide Coating Wafer Holder

    The Silicon Carbide Coating Wafer Holder by Veteksemicon is engineered for precision and performance in advanced semiconductor processes such as MOCVD, LPCVD, and high-temperature annealing. With a uniform CVD SiC coating, this wafer holder ensures exceptional thermal conductivity, chemical inertness, and mechanical strength — essential for contamination-free, high-yield wafer processing.
  • SiC Coating Cover Segments Inner

    SiC Coating Cover Segments Inner

    At VeTek Semiconductor, we specialize in the research, development, and industrialization of CVD SiC coating and CVD TaC coating. One exemplary product is the SiC Coating Cover Segments Inner, which undergoes extensive processing to achieve a highly precise and densely coated CVD SiC surface. This coating demonstrates exceptional resistance to high temperatures and provides robust corrosion protection. Feel free to contact us for any inquiries.
  • SiN substrate

    SiN substrate

    VeTek Semiconductor is a leading manufacturer and supplier of SiN Substrate products in China. Our Silicon Nitride substrate has excellent thermal conductivity, excellent chemical stability and corrosion resistance, and excellent strength, making it a high-performance material for semiconductor applications. VeTekSemi SiN substrate ensures that you benefit from cutting-edge technology in the field of semiconductor processing, strict quality control, and welcomes your further consultation.

  • Why is CO₂ Introduced During the Wafer Dicing Process?

    Introducing CO₂ into the dicing water during wafer cutting is an effective process measure to suppress static charge buildup and lower contamination risk, thereby improving dicing yield and long-term chip reliability.

  • What is Tantalum Carbide TaC Coating? - Veteksemicon

    This article introduces the product characteristics of TaC coating, the specific process of preparing TaC coating products using CVD technology, introduces Veteksemicon's most popular TaC coating, and briefly analyzes the reasons for choosing Veteksemicon.

  • Why does 3C-SiC stand out among many SiC polymorphs? - VeTek Semiconductor

    Silicon carbide (SiC) is a high-precision semiconductor material known for its excellent properties like high temperature resistance, corrosion resistance, and high mechanical strength. It has over 200 crystal structures, with 3C-SiC being the only cubic type, offering superior natural sphericity and densification compared to other types. 3C-SiC stands out for its high electron mobility, making it ideal for MOSFETs in power electronics. Additionally, it shows great potential in nanoelectronics, blue LEDs, and sensors.

  • How does SiC coating improve the oxidation resistance of carbon felt？

    The article describes the excellent physical properties of Carbon felt, the specific reasons for choosing SiC coating, and the method and principle of SiC coating on carbon felt. It also specifically analyzes the use of D8 ADVANCE X-ray diffractometer (XRD) to analyze the phase composition of SiC coating carbon felt.

  • The top 3 quartz material suppliers in the world

    Quartz material is one of the essential materials for high-tech industries such as semiconductors and photovoltaics. This blog introduces the world's top three quartz material suppliers Sibelco, TQC and Momentive and their products.

  • Italy's LPE's 200mm SiC epitaxial technology progress

    This article introduces the latest developments in the newly designed PE1O8 hot-wall CVD reactor of the Italian company LPE and its ability to perform uniform 4H-SiC epitaxy on 200mm SiC.

Send Inquiry

X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept