Silicon Carbide Coating

The 8-inch SiC epi top ring is a hardware part for semiconductor reactors. It works inside Si/SiC epitaxy and MOCVD/CVD systems. This ring stabilizes the heat inside the chamber. It also controls the flow of gases. The material is high-purity CVD Silicon Carbide. It does not have the outgassing issues of graphite. It also reduces particle contamination during production.We welcome your inquiries.

VETEK MOCVD SiC Coated Susceptor is a precision-engineered carrier solution specifically developed for LED and compound semiconductor epitaxial growth. It demonstrates exceptional thermal uniformity and chemical inertness within complex MOCVD environments. Leveraging VETEK’s rigorous CVD deposition process, we are committed to enhancing wafer growth consistency and extending the service life of core components, providing stable and reliable performance assurance for every batch of your semiconductor production.

Veteksemicon Solid Silicon Carbide (SiC) Focusing Ring is a critical consumable component used in advanced semiconductor epitaxy and plasma etching processes, where precise control of plasma distribution, thermal uniformity, and wafer edge effects is essential. Manufactured from high-purity solid silicon carbide, this focusing ring exhibits exceptional plasma erosion resistance, high-temperature stability, and chemical inertness, enabling reliable performance under aggressive process conditions. We look forward to your inquiry.

Veteksemicon SiC Coated Epitaxial Reactor chamber is a core component designed for demanding semiconductor epitaxial growth processes. Utilizing advanced chemical vapor deposition (CVD), this product forms a dense, high-purity SiC coating on a high-strength graphite substrate, resulting in superior high-temperature stability and corrosion resistance. It effectively resists the corrosive effects of reactant gases in high-temperature process environments, significantly suppresses particulate contamination, ensures consistent epitaxial material quality and high yield, and substantially extends the maintenance cycle and lifespan of the reaction chamber. It is a key choice for improving the manufacturing efficiency and reliability of wide-bandgap semiconductors such as SiC and GaN.

In the core process of silicon carbide epitaxial growth, Veteksemicon understands that susceptor performance directly determines the quality and production efficiency of the epitaxial layer. Our high-purity EPI susceptors, designed specifically for the SiC field, utilize a special graphite substrate and a dense CVD SiC coating. With their superior thermal stability, excellent corrosion resistance, and extremely low particle generation rate, they ensure unparalleled thickness and doping uniformity for customers even in harsh high-temperature process environments. Choosing Veteksemicon means choosing the cornerstone of reliability and performance for your advanced semiconductor manufacturing processes.

Veteksemicon SiC coated graphite susceptor for ASM is a core carrier component in semiconductor epitaxial processes. This product utilizes our proprietary pyrolytic silicon carbide coating technology and precision machining processes to ensure superior performance and an ultra-long lifespan in high-temperature and corrosive process environments. We deeply understand the stringent requirements of epitaxial processes on substrate purity, thermal stability, and consistency, and are committed to providing customers with stable, reliable solutions that enhance overall equipment performance.