Silicon Carbide Coating

This AMAT 0200-03201 Wafer Lift Pin from VeTek starts with high-purity graphite, then we add a dense CVD SiC coating on top. It’s made for 300mm epitaxy systems and Applied Materials EPI reactors. Why graphite and SiC? Graphite handles heat really well. The SiC layer takes on corrosive gases and doesn’t wear out fast. The thin wall design? That’s for cleaner wafer lifting and positioning, fewer particles, and longer part life under high temperatures. We also make similar SiC coated graphite parts for ASM, Aixtron, and LPE systems. Looking forward to your inquiry.

Vetek Semiconductor makes wafer carriers for VEECO MOCVD systems, built specifically for LED epitaxy work like GaN LEDs, blue-green LEDs, and deep UV LED growth. These carriers start with high-purity graphite and get a dense CVD silicon carbide (SiC) coating. That combination holds up well under the high temperatures you see in MOCVD – good thermal stability, corrosion resistance, and the coating lasts.

The Halfmoon is a graphite component used inside LPE SiC reactors, mainly installed around the chamber hot zone. Although it does not directly contact the wafer, it still plays a role in gas flow stability and reactor operation during epitaxial growth.To handle high temperature and reactive process conditions, the component is usually protected with CVD SiC coating, while TaC coating is also available for some applications. VETEK also supplies graphite felt insulation and other coated graphite parts for SiC epitaxy systems.

The 8-inch SiC epi top ring is a hardware part for semiconductor reactors. It works inside Si/SiC epitaxy and MOCVD/CVD systems. This ring stabilizes the heat inside the chamber. It also controls the flow of gases. The material is high-purity CVD Silicon Carbide. It does not have the outgassing issues of graphite. It also reduces particle contamination during production.We welcome your inquiries.

VETEK MOCVD SiC Coated Susceptor is a precision-engineered carrier solution specifically developed for LED and compound semiconductor epitaxial growth. It demonstrates exceptional thermal uniformity and chemical inertness within complex MOCVD environments. Leveraging VETEK’s rigorous CVD deposition process, we are committed to enhancing wafer growth consistency and extending the service life of core components, providing stable and reliable performance assurance for every batch of your semiconductor production.

Veteksemicon Solid Silicon Carbide (SiC) Focusing Ring is a critical consumable component used in advanced semiconductor epitaxy and plasma etching processes, where precise control of plasma distribution, thermal uniformity, and wafer edge effects is essential. Manufactured from high-purity solid silicon carbide, this focusing ring exhibits exceptional plasma erosion resistance, high-temperature stability, and chemical inertness, enabling reliable performance under aggressive process conditions. We look forward to your inquiry.