SiC Coated Planetary Susceptor

The SiC Coated Planetary Susceptor is a planetary carrier coated with silicon carbide (SiC), which is mainly used in semiconductor material deposition processes such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), etc. Its main function is to carry and rotate wafers to ensure material uniformity and thermal field consistency during the deposition process. Its main function is to carry and rotate wafers to ensure material uniformity and thermal field consistency during deposition, and the SiC coating provides the carrier with excellent high temperature resistance, corrosion resistance, and thermal conductivity for high-precision semiconductor wafer processing.

Core Application Scenarios for SiC Coated Planetary Susceptor

MOCVD Epitaxial Growth Process

In the MOCVD process, the SiC Coated Planetary Susceptor is mainly used to carry wafers of silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs) and other materials.

● Functional requirements: Precise positioning and synchronized rotation of wafers to ensure uniform distribution of vapor-deposited materials on the wafer surface and enhance uniformity of film thickness and composition.

● Advantage: SiC coatings are highly corrosion-resistant and can withstand the erosion of highly reactive metal-organic precursors such as trimethylgallium (TMGa) and trimethylindium (TMIn), extending their service life.

Silicon Carbide (SiC) Power Device Manufacturing

SiC Coated Planetary Susceptor is widely used in the epitaxial growth of SiC power devices, such as MOSFET, IGBT, SBD and other devices.

● Functional requirements: Provide a stable thermal equalization platform in high temperature environments to ensure epitaxial layer crystallization quality and defect control.

● Advantage: SiC coatings are resistant to high temperature (>1600°C) and have a coefficient of thermal expansion (4.0×10^-6 K^-1) close to that of silicon carbide wafers, which effectively reduces thermal stresses and improves the quality and stability of the epitaxial layer.

Deep Ultraviolet (DUV) and Ultraviolet LED Epitaxial Manufacturing

The SiC Coated Planetary Susceptor is suitable for the epitaxial growth of materials such as Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN), and is widely used in the manufacturing of UV-LEDs and Micro LEDs.

● Functional requirements: Maintain precise temperature control and uniform airflow distribution to ensure wavelength accuracy and device performance.

● Advantage: High thermal conductivity and oxidation resistance allow for excellent stability at high temperatures over long periods of operation, helping to improve the luminous efficiency and consistency of LED chips.

Choose Veteksemicon

Veteksemicon SiC Coated Planetary Susceptor has demonstrated irreplaceable advantages in high temperature, corrosive semiconductor manufacturing environments through its unique material properties and mechanical design. And our main Planetary Susceptor products are SiC Coated Planetary Susceptor, ALD Planetary Susceptor, TaC Coating Planetary Susceptor and so on. At the same time, Veteksemicon is committed to providing customized products and technical services to the semiconductor industry. We sincerely look forward to being your long-term partner in China.