CVD SiC coated wafer susceptor

In semiconductor manufacturing, epitaxy is a critical step in chip production, and the wafer susceptor, as a key component of epitaxial equipment, directly impacts the uniformity, defect rate, and efficiency of epitaxial layer growth. To address the industry’s increasing demand for high-purity, high-stability materials, Veteksemicon introduces the CVD SiC-Coated Wafer Susceptor, featuring ultra-high purity (≤100ppb, ICP-E10 certified) and full-size compatibility (6”, 8”, 12”), positioning it as a leading solution for advanced epitaxial processes in China and beyond.

Ⅰ. Core Advantages

1. Industry-Leading Purity

The silicon carbide (SiC) coating, deposited via chemical vapor deposition (CVD), achieves impurity levels of ≤100ppb (E10 standard) as verified by ICP-MS (Inductively Coupled Plasma Mass Spectrometry). This ultra-high purity minimizes contamination risks during epitaxial growth, ensuring superior crystal quality for critical applications such as gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap semiconductor manufacturing.

2. Exceptional High-Temperature Resistance & Chemical Durability

The CVD SiC coating delivers outstanding physical and chemical stability:

High-Temperature Endurance: Stable operation up to 1600°C without delamination or deformation;

Corrosion Resistance: Withstands aggressive epitaxial process gases (e.g., HCl, H₂), extending service life;

Low Thermal Stress: Matches the thermal expansion coefficient of SiC wafers, reducing warpage risks.

3. Full-Size Compatibility for Mainstream Production Lines

Available in 6-inch, 8-inch, and 12-inch configurations, the susceptor supports diverse applications, including third-generation semiconductors, power devices, and RF chips. Its precision-engineered surface ensures seamless integration with AMTA and other mainstream epitaxial reactors, enabling rapid production line upgrades.

4. Localized Production Breakthrough

Leveraging proprietary CVD and post-processing technologies, we have broken the overseas monopoly on high-purity SiC-coated susceptors, offering domestic and global customers a cost-effective, fast-delivery, and locally supported alternative.

Ⅱ. Technical Excellence

● Precision CVD Process: Optimized deposition parameters (temperature, gas flow) ensure dense, pore-free coatings with uniform thickness (deviation ≤3%), eliminating particle contamination;

● Cleanroom Manufacturing: Entire production process, from substrate preparation to coating, is conducted in Class 100 cleanrooms, meeting semiconductor-grade cleanliness standards;

● Customization: Tailored coating thickness, surface roughness (Ra ≤0.5μm), and pre-coated aging treatments to accelerate equipment commissioning.

Ⅲ. Applications & Customer Benefits

● Third-Generation Semiconductor Epitaxy: Ideal for MOCVD/MBE growth of SiC and GaN, enhancing device breakdown voltage and switching efficiency;

● Silicon-Based Epitaxy: Improves layer uniformity for high-voltage IGBTs, sensors, and other silicon devices;

● Value Delivered:

Reduces epitaxial defects, boosting chip yield;

Lowers maintenance frequency and total cost of ownership;

Accelerates supply chain independence for semiconductor equipment and materials.

As a pioneer in high-purity CVD SiC-coated wafer susceptors in China, we are committed to advancing semiconductor manufacturing through cutting-edge technology. Our solutions ensure reliable performance for both new production lines and legacy equipment retrofits, empowering epitaxial processes with unmatched quality and efficiency.

Basic physical properties of CVD SiC coating