Silicon Carbide Coating Wafer Holder

The Silicon Carbide (SiC) Coating Wafer Holder is an essential component in semiconductor manufacturing, specifically designed for ultra-clean, high-temperature processes such as MOCVD (Metal Organic Chemical Vapor Deposition), LPCVD, PECVD, and thermal annealing. By integrating a dense and uniform CVD SiC coating on a robust graphite or ceramic substrate, this wafer carrier ensures both mechanical stability and chemical inertness under harsh environments.

Ⅰ. Core Function in Semiconductor Processing

In semiconductor fabrication, wafer holders play a pivotal role in ensuring wafers are securely supported, uniformly heated, and protected during deposition or thermal treatment. The SiC coating provides an inert barrier between the base substrate and the process environment, effectively minimizing particle contamination and outgassing, which are critical to achieving high device yield and reliability.

Key Applications Include:

● Epitaxial growth (SiC, GaN, GaAs layers)

● Thermal oxidation and diffusion

● High-temperature annealing (>1200°C)

● Wafer transfer and support during vacuum and plasma processes

Ⅱ. Superior Physical Characteristics

These parameters demonstrate the wafer holder’s capability to maintain performance stability even under rigorous process cycles, making it ideal for next-generation device manufacturing.

Ⅲ. Process Workflow – Step-by-Step Application Scenario

Let’s take MOCVD epitaxy as a typical process scenario to illustrate the usage:

1. Wafer Placement: The silicon, GaN, or SiC wafer is gently placed onto the SiC-coated wafer susceptor.

2. Chamber Heating: The chamber is heated rapidly to high temperatures (~1000–1600°C). SiC coating ensures efficient thermal conduction and surface stability.

3. Precursor Introduction: Metal-organic precursors flow into the chamber. The SiC coating resists chemical attacks and prevents outgassing from the substrate.

4. Epitaxial Layer Growth: Uniform layers are deposited without contamination or thermal distortion, thanks to the excellent flatness and chemical inertness of the holder.

5. Cool Down & Extraction: After processing, the holder allows safe thermal transition and wafer retrieval without particle shedding.

By maintaining dimensional stability, chemical purity, and mechanical strength, the SiC Coating Wafer susceptor significantly improves process yield and reduces tool downtime.

CVD SIC FILM CRYSTAL STRUCTURE:

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