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MOCVD SiC Coated Susceptor
  • MOCVD SiC Coated SusceptorMOCVD SiC Coated Susceptor

MOCVD SiC Coated Susceptor

VETEK MOCVD SiC Coated Susceptor is a precision-engineered carrier solution specifically developed for LED and compound semiconductor epitaxial growth. It demonstrates exceptional thermal uniformity and chemical inertness within complex MOCVD environments. Leveraging VETEK’s rigorous CVD deposition process, we are committed to enhancing wafer growth consistency and extending the service life of core components, providing stable and reliable performance assurance for every batch of your semiconductor production.

Technical Parameters


Basic physical properties of CVD SiC coating
Property
Typical Value
Crystal Structure
FCC β phase polycrystalline, mainly (111) orientation
Density
3.21 g/cm³
Hardness
2500 Vickers hardness (500g load)
Grain SiZe
2~10μm
Chemical Purity
99.99995%
Heat Capacity
640 J·kg-1·K-1
Sublimation Temperature
2700℃
Flexural Strength
415 MPa RT 4-point
Young' s Modulus
430 Gpa 4pt bend, 1300℃
Thermal Conductivity
300W·m-1·K-1
Thermal Expansion(CTE)
4.5×10-6K-1


CVD SIC FILM CRYSTAL STRUCTURE

CVD SIC FILM CRYSTAL STRUCTURE


Product Definition and Composition


The VETEK MOCVD SiC Coated Susceptor is a premium wafer-carrying component engineered specifically for the epitaxial processing of third-generation semiconductors, such as GaN and SiC. This product integrates the superior physical properties of two high-performance materials:


High-Purity Graphite Substrate: Manufactured using isostatic pressing technology to ensure the base material possesses exceptional structural integrity, high density, and thermal processing stability.

CVD SiC Coating: A dense, stress-free silicon carbide (SiC) protective layer is grown on the graphite surface through advanced Chemical Vapor Deposition (CVD) technology.


Why VETEK is Your Yield Guarantee


Ultimate Precision in Thermal Uniformity Control: Unlike conventional carriers, VETEK susceptors achieve highly synchronized heat transfer across the entire surface through nanometer-scale precision control of coating thickness and thermal resistance. This sophisticated thermal management effectively minimizes wavelength standard deviation (STD) on the wafer surface, significantly boosting both single-wafer quality and overall batch consistency.

Long-term Protection with Zero Particle Contamination: In MOCVD reaction chambers containing highly corrosive gases, ordinary graphite pedestals are prone to particle flaking. VETEK’s CVD SiC coating possesses exceptional chemical inertness, acting as an impenetrable shield that seals graphite micropores. This ensures total isolation of substrate impurities, preventing any contamination of the GaN or SiC epitaxial layers.

Exceptional Fatigue Resistance and Service Life: Thanks to VETEK’s proprietary interface treatment process, our SiC coating achieves an optimized thermal expansion match with the graphite substrate. Even under high-frequency thermal cycling between extreme temperatures, the coating maintains superior adhesion without peeling or developing micro-cracks. This significantly reduces the frequency of spare part maintenance and lowers your total cost of ownership.


Our workshop

Our workshop

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