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China High Uniformity Susceptor Manufacturer, Supplier, Factory

The key to our success is "Good Solution Top quality, Reasonable Value and Efficient Service" for High Uniformity Susceptor, MOCVD Susceptor, SiC Coated Carrier, Graphite Wafer Holder, LED Epitaxy Tray, Seeing believes! We sincerely welcome the new clients overseas to setup business enterprise interactions and also be expecting to consolidate the relationships while using the long-established prospects.
High Uniformity Susceptor, Thus far, our item associated with may be shown in most foreign nations as well as urban centers, which are sought after simply by targeted traffic. We all highly imagine that now we have the full capacity to present you with contented merchandise. Desire to collect requests of your stuff and produce the long-term co-operation partnership. We very seriously promise:Csame top quality, better price; exact same selling price, higher quality.

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    TaC Coated Graphite Wafer Carrier

    VeTek Semiconductor has carefully designed TaC Coated Graphite Wafer Carrier for customers. It is composed of high-purity graphite and TaC coating, which is suitable for various wafer epitaxial wafer processing. We have been specialized in SiC and TaC coating for many years. Compared with SiC coating, Our TaC coated graphite wafer carrier has a higher temperature resistance and wear-resistant. We look forward to becoming your long-term partner in China.
  • Silicon Carbide Wafer Boat for Horizontal Furnace

    Silicon Carbide Wafer Boat for Horizontal Furnace

    SiC wafer boat has high requirement in material purity.Vetek Semiconductor supply SiC purity ＞99.96% recrystallized SiC to this product.VeTek Semiconductor is a professional manufacturer and supplier in China for silicon carbide wafer boat for horizontal furnace, with years of experience in R&D and production, can control the quality well and offer a competitive price. You can rest assured to buy the silicon carbide wafer boat for horizontal furnace from us.
  • High purity graphite ring

    High purity graphite ring

    High purity graphite ring is suitable for GaN epitaxial growth processes. Their excellent stability and superior performance have made them widely used. VeTek Semiconductor produces and manufactures world-leading High purity graphite ring to help the GaN epitaxy industry continue to progress. VeTekSemi looks forward to becoming your partner in China.
  • ALD Planetary Susceptor

    ALD Planetary Susceptor

    ALD process,means Atomic Layer Epitaxy process. Vetek Semiconductor and ALD system manufacturers have developed and produced SiC coated ALD Planetary Susceptors that meet the high requirements of the ALD process to evenly distribute the airflow over the substrate. At the same time, our high purity CVD SiC coating ensures purity in the process. Welcome to discuss cooperation with us.
  • Aixtron Satellite wafer carrier

    Aixtron Satellite wafer carrier

    VeTek Semiconductor’s Aixtron Satellite Wafer Carrier is a wafer carrier used in AIXTRON equipment, mainly used in MOCVD processes, and is particularly suitable for high-temperature and high-precision semiconductor processing processes. The carrier can provide stable wafer support and uniform film deposition during MOCVD epitaxial growth, which is essential for the layer deposition process. Welcome your further consultation.
  • Thermal spraying technology MLCC capacitor

    Thermal spraying technology MLCC capacitor

    Vetek Semiconductor thermal spraying technology plays an extremely important role in the coating application of sintered crucibles for high-end multilayer ceramic capacitor (MLCC) materials. With the continuous miniaturization and high performance of electronic devices, the demand for thermal spraying technology MLCC capacitors is also growing rapidly, especially in high-end applications. Looking forward to setting up long term business with you.

  • What is hot pressed SiC ceramics?

    Hot pressing sintering is the main method for preparing high-performance SiC ceramics. The process of hot pressing sintering includes: selecting high-purity SiC powder, pressing and molding under high temperature and high pressure, and then sintering. SiC ceramics prepared by this method have the advantages of high purity and high density, and are widely used in grinding discs and heat treatment equipment for wafer processing.

  • Thermal Field Design for SiC Single Crystal Growth

    With the growing demand for SiC materials in power electronics, optoelectronics and other fields, the development of SiC single crystal growth technology will become a key area of ​​scientific and technological innovation. As the core of SiC single crystal growth equipment, thermal field design will continue to receive extensive attention and in-depth research.

  • The challenges of silicon carbide crystal growth furnaces

    Silicon carbide (SiC) crystal growth furnaces play a vital role in producing high-performance Sic wafers for next-generation semiconductor devices. However, the process of growing high-quality SiC crystals presents significant challenges. From managing extreme thermal gradients to reducing crystal defects, ensuring uniform growth, and controlling production costs, each step requires advanced engineering solutions. This article will analyze the technical challenges of SIC crystal growth furnaces from multiple perspectives.

  • Porous Silicon Carbide (SiC) Ceramic Plates: High-Performance Materials in Semiconductor Manufacturing

    Porous SiC Ceramic Plate is one of the core materials in the field of semiconductor manufacturing. With its unique structure and excellent physical properties, Porous SiC Ceramic Disc has become an irreplaceable key component in high temperature and corrosive environments. In this article, we will deeply analyze its physical properties, application scenarios and selection advantages.

  • What is semiconductor epitaxy process?

    It is ideal to build integrated circuits or semiconductor devices on a perfect crystalline base layer. The epitaxy (epi) process in semiconductor manufacturing aims to deposit a fine single-crystalline layer, usually about 0.5 to 20 microns, on a single-crystalline substrate. The epitaxy process is an important step in the manufacture of semiconductor devices, especially in silicon wafer manufacturing.

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    For industrial-scale production of silicon carbide substrates, the success of a single growth run is not the end goal. The real challenge lies in ensuring that crystals grown across different batches, tools, and time periods maintain a high level of consistency and repeatability in quality. In this context, the role of tantalum carbide (TaC) coating goes beyond basic protection—it becomes a key factor in stabilizing the process window and safeguarding product yield.

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